 |  | |
| PartNumber | SI7884BDP-T1-GE3 | SI7884BDP-T1-E3 |
| Description | MOSFET 40V 58A 46W 7.5mohm @ 10V | MOSFET N-CH 40V 58A PPAK SO-8 |
| Manufacturer | Vishay | VISHAY |
| Product Category | MOSFET | FETs - Single |
| RoHS | Y | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | PowerPAK-SO-8 | - |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | - |
| Id Continuous Drain Current | 58 A | - |
| Rds On Drain Source Resistance | 7.5 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - |
| Vgs Gate Source Voltage | 10 V | - |
| Qg Gate Charge | 51 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 46 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Tradename | TrenchFET | - |
| Packaging | Reel | - |
| Height | 1.04 mm | - |
| Length | 6.15 mm | - |
| Series | SI7 | - |
| Transistor Type | 1 N-Channel | - |
| Width | 5.15 mm | - |
| Brand | Vishay / Siliconix | - |
| Forward Transconductance Min | 55 S | - |
| Fall Time | 8 ns | - |
| Product Type | MOSFET | - |
| Rise Time | 10 ns | - |
| Factory Pack Quantity | 3000 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 32 ns | - |
| Typical Turn On Delay Time | 14 ns | - |
| Part # Aliases | SI7884BDP-GE3 | - |
| Unit Weight | 0.017870 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI7884BDP-T1-GE3 | MOSFET 40V 58A 46W 7.5mohm @ 10V | |
Vishay |
SI7884BDP-T1-E3 | MOSFET N-CH 40V 58A PPAK SO-8 | |
| SI7884BDP-T1-GE3 | MOSFET N-CH 40V 58A PPAK SO-8 |