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| PartNumber | SI7900AEDN-T1-E3 | SI7900AEDN-T1-GE3 |
| Description | MOSFET 20V Vds 12V Vgs PowerPAK 1212-8 | MOSFET 20V Vds 12V Vgs PowerPAK 1212-8 |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | E | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-1212-8 | PowerPAK-1212-8 |
| Number of Channels | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V |
| Id Continuous Drain Current | 8.5 A | 8.5 A |
| Rds On Drain Source Resistance | 26 mOhms | 26 mOhms |
| Vgs th Gate Source Threshold Voltage | 400 mV | 400 mV |
| Vgs Gate Source Voltage | 12 V | 12 V |
| Qg Gate Charge | 16 nC | 16 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 3.1 W | 3.1 W |
| Configuration | Dual | Dual |
| Channel Mode | Enhancement | Enhancement |
| Tradename | TrenchFET | TrenchFET |
| Packaging | Reel | Reel |
| Series | SI7 | SI7 |
| Transistor Type | 2 N-Channel | 2 N-Channel |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 25 S | 25 S |
| Fall Time | 4.2 ns | 4.2 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 1.3 ns | 1.3 ns |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 8.6 ns | 8.6 ns |
| Typical Turn On Delay Time | 0.85 ns | 0.85 ns |
| Part # Aliases | SI7900AEDN-T1 | SI7900AEDN-GE3 |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI7900AEDN-T1-E3 | MOSFET 20V Vds 12V Vgs PowerPAK 1212-8 | |
| SI7900AEDN-T1-GE3 | MOSFET 20V Vds 12V Vgs PowerPAK 1212-8 | ||
Vishay |
SI7900AEDN-T1-E3 | RF Bipolar Transistors MOSFET 20V 8.5A 1.5W | |
| SI7900AEDN-T1-GE3 | RF Bipolar Transistors MOSFET 20V 8.5A 3.1W 26mohm @ 4.5V | ||
| SI7900AEDN-T | New and Original | ||
| SI7900AEDN-T1 | New and Original | ||
| SI7900AEDN-T1-E3 GE3 | New and Original |