 |  | |
| PartNumber | SI7900AEDN-T1-E3 | SI7900AEDN-T1-E3 GE3 |
| Description | MOSFET 20V Vds 12V Vgs PowerPAK 1212-8 | |
| Manufacturer | Vishay | - |
| Product Category | MOSFET | - |
| RoHS | E | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | PowerPAK-1212-8 | - |
| Number of Channels | 2 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | - |
| Id Continuous Drain Current | 8.5 A | - |
| Rds On Drain Source Resistance | 26 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 400 mV | - |
| Vgs Gate Source Voltage | 12 V | - |
| Qg Gate Charge | 16 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 3.1 W | - |
| Configuration | Dual | - |
| Channel Mode | Enhancement | - |
| Tradename | TrenchFET | - |
| Packaging | Reel | - |
| Series | SI7 | - |
| Transistor Type | 2 N-Channel | - |
| Brand | Vishay / Siliconix | - |
| Forward Transconductance Min | 25 S | - |
| Fall Time | 4.2 ns | - |
| Product Type | MOSFET | - |
| Rise Time | 1.3 ns | - |
| Factory Pack Quantity | 3000 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 8.6 ns | - |
| Typical Turn On Delay Time | 0.85 ns | - |
| Part # Aliases | SI7900AEDN-T1 | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI7900AEDN-T1-E3 | MOSFET 20V Vds 12V Vgs PowerPAK 1212-8 | |
Vishay |
SI7900AEDN-T1-E3 | RF Bipolar Transistors MOSFET 20V 8.5A 1.5W | |
| SI7900AEDN-T1-E3 GE3 | New and Original |