SI7942DP-T1-

SI7942DP-T1-E3 vs SI7942DP-T1-GE3 vs SI7942DP-T1

 
PartNumberSI7942DP-T1-E3SI7942DP-T1-GE3SI7942DP-T1
DescriptionMOSFET 100V Vds 20V Vgs PowerPAK SO-8MOSFET 100V Vds 20V Vgs PowerPAK SO-8MOSFET, DUAL N-CH, 100V, 3.8A, 150DEG C
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSEY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-SO-8PowerPAK-SO-8-
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current5.9 A--
Rds On Drain Source Resistance4.9 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge24 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation3.5 W--
ConfigurationDual--
Channel ModeEnhancement--
TradenameTrenchFETTrenchFET-
PackagingReelReel-
Height1.04 mm1.04 mm-
Length6.15 mm6.15 mm-
SeriesSI7SI7-
Transistor Type2 N-Channel--
Width5.15 mm5.15 mm-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min14 S--
Fall Time20 ns--
Product TypeMOSFETMOSFET-
Rise Time15 ns--
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time35 ns--
Typical Turn On Delay Time15 ns--
Part # AliasesSI7942DP-T1SI7942DP-GE3-
Unit Weight0.017870 oz0.017870 oz-
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SI7942DP-T1-E3 MOSFET 100V Vds 20V Vgs PowerPAK SO-8
SI7942DP-T1-GE3 MOSFET 100V Vds 20V Vgs PowerPAK SO-8
SI7942DP-T1 MOSFET, DUAL N-CH, 100V, 3.8A, 150DEG C
Vishay
Vishay
SI7942DP-T1-GE3 MOSFET 2N-CH 100V 3.8A PPAK SO-8
SI7942DP-T1-E3 Trans MOSFET N-CH 100V 3.8A 8-Pin PowerPAK SO T/R
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