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| PartNumber | SI7942DP-T1-E3 | SI7942DP | SI7942DP-T1 |
| Description | MOSFET 100V Vds 20V Vgs PowerPAK SO-8 | MOSFET, DUAL N-CH, 100V, 3.8A, 150DEG C | |
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PowerPAK-SO-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 5.9 A | - | - |
| Rds On Drain Source Resistance | 4.9 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 24 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 3.5 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Height | 1.04 mm | - | - |
| Length | 6.15 mm | - | - |
| Series | SI7 | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Width | 5.15 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 14 S | - | - |
| Fall Time | 20 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 15 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 35 ns | - | - |
| Typical Turn On Delay Time | 15 ns | - | - |
| Part # Aliases | SI7942DP-T1 | - | - |
| Unit Weight | 0.017870 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI7942DP-T1-E3 | MOSFET 100V Vds 20V Vgs PowerPAK SO-8 | |
| SI7942DP-T1-GE3 | MOSFET 100V Vds 20V Vgs PowerPAK SO-8 | ||
| SI7942DP | New and Original | ||
| SI7942DP-T1 | MOSFET, DUAL N-CH, 100V, 3.8A, 150DEG C | ||
Vishay |
SI7942DP-T1-GE3 | MOSFET 2N-CH 100V 3.8A PPAK SO-8 | |
| SI7942DP-T1-E3 | Trans MOSFET N-CH 100V 3.8A 8-Pin PowerPAK SO T/R |