 |  |  | |
| PartNumber | SIHB100N60E-GE3 | SIHB11N80E-GE3 | SIHB10N40D-GE3 |
| Description | MOSFET 650V Vds; 30V Vgs D2PAK (TO-263) | MOSFET 800V Vds 30V Vgs D2PAK (TO-263) | MOSFET 400V Vds 30V Vgs D2PAK (TO-263) |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | D2PAK-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 800 V | 450 V |
| Id Continuous Drain Current | 30 A | 12 A | 10 A |
| Rds On Drain Source Resistance | 100 mOhms | 440 mOhms | 600 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 2 V | 5 V |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Qg Gate Charge | 50 nC | 88 nC | 15 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 208 W | 179 W | 147 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | - | Reel |
| Series | E | E | D |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 11 S | 4.5 S | - |
| Fall Time | 20 ns | 18 ns | 14 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 34 ns | 15 ns | 18 ns |
| Factory Pack Quantity | 1000 | - | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 33 ns | 55 ns | 18 ns |
| Typical Turn On Delay Time | 21 ns | 18 ns | 12 ns |
| Height | - | - | 4.83 mm |
| Length | - | - | 10.67 mm |
| Width | - | - | 9.65 mm |
| Unit Weight | - | - | 0.050717 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHB120N60E-GE3 | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | |
| SIHB180N60E-GE3 | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | ||
| SIHB100N60E-GE3 | MOSFET 650V Vds; 30V Vgs D2PAK (TO-263) | ||
| SIHB17N80E-GE3 | MOSFET 800V Vds 30V Vgs D2PAK (TO-263) | ||
| SIHB11N80E-GE3 | MOSFET 800V Vds 30V Vgs D2PAK (TO-263) | ||
| SIHB16N50C-E3 | MOSFET N-Channel 500V | ||
| SIHB12N65E-GE3 | MOSFET 650V Vds 30V Vgs D2PAK (TO-263) | ||
| SIHB12N50E-GE3 | MOSFET 500V Vds 30V Vgs D2PAK (TO-263) | ||
| SIHB15N60E-GE3 | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | ||
| SIHB12N60E-GE3 | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | ||
| SIHB15N65E-GE3 | MOSFET 650V Vds 30V Vgs D2PAK (TO-263) | ||
| SIHB10N40D-GE3 | MOSFET 400V Vds 30V Vgs D2PAK (TO-263) | ||
| SIHB12N60ET1-GE3 | MOSFET N-Channel 600V | ||
| SIHB12N50C-E3 | MOSFET N-Channel 500V | ||
| SIHB12N60ET5-GE3 | MOSFET N-Channel 600V | ||
| SIHB18N60E-GE3 | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | ||
Vishay |
SIHB12N60E-GE3 | Darlington Transistors MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS | |
| SIHB12N65E-GE3 | IGBT Transistors MOSFET 650V 392mOhm@10V 12A N-Ch E-SRS | ||
| SIHB12N50C-E3 | IGBT Transistors MOSFET N-Channel 500V | ||
| SIHB15N50E-GE3 | IGBT Transistors MOSFET N-Channel 500V | ||
| SIHB12N50E-GE3 | IGBT Transistors MOSFET N-Channel 500V | ||
| SIHB15N65E-GE3 | RF Bipolar Transistors MOSFET 650V 280mOhm@10V 15A N-Ch E-SRS | ||
| SIHB16N50C-E3 | MOSFET N-CH 500V 16A D2PAK | ||
| SIHB10N40D-GE3 | MOSFET N-CH 400V 10A DPAK | ||
| SIHB15N60E-GE3 | MOSFET N-CH 600V 15A DPAK | ||
| SIHB100N60E-GE3 | E Series Power MOSFET D2PAK (TO-263), 100 m @ 10V | ||
| SIHB120N60E-GE3 | MOSFET N-CHAN 650V D2PAK (TO-263 | ||
| SIHB12N60ET1-GE3 | MOSFET N-CH 600V 12A TO263 | ||
| SIHB12N60ET5-GE3 | MOSFET N-CH 600V 12A TO263 | ||
| SIHB180N60E-GE3 | E Series Power MOSFET D2PAK (TO-263), 180 m @ 10V | ||
| SIHB18N60E-GE3 | MOSFET N-CH 600V 18A TO263 | ||
| SIHB15N60E-GE3-CUT TAPE | New and Original | ||
| SIHB10N40D | New and Original | ||
| SIHB11N80E | New and Original | ||
| SIHB12N50C | New and Original | ||
| SIHB12N60E | New and Original | ||
| SIHB12N60EGE3 | Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| SIHB12N65E | New and Original | ||
| SIHB15N60E | New and Original | ||
| SIHB15N60EGE3 | Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| SIHB15N65E | New and Original |