 | |  | |
| PartNumber | SIS430DN | SIS430DN-GE3 | SIS430DN-T1-GE3 |
| Description | MOSFET N-CH 25V 35A PPAK 1212-8 | ||
| Manufacturer | - | - | VISHAY |
| Product Category | - | - | FETs - Single |
| Series | - | - | SISxxxDN |
| Packaging | - | - | Reel |
| Part Aliases | - | - | SIS430DN-GE3 |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | PowerPAK-1212-8 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single Quad Drain Triple Source |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 3.8 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 10 ns |
| Rise Time | - | - | 12 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 35 A |
| Vds Drain Source Breakdown Voltage | - | - | 25 V |
| Rds On Drain Source Resistance | - | - | 5.6 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 25 ns |
| Typical Turn On Delay Time | - | - | 20 ns |
| Forward Transconductance Min | - | - | 61 S |
| Channel Mode | - | - | Enhancement |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
| SIS430DN | New and Original | ||
| SIS430DN-GE3 | New and Original | ||
Vishay |
SIS430DN-T1-GE3 | MOSFET N-CH 25V 35A PPAK 1212-8 |