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| PartNumber | SISA12ADN-T1-GE3 | SISA14DN-T1-GE3 | SISA10DN-T1-GE3 |
| Description | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | E | E |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-1212-8 | PowerPAK-1212-8 | PowerPAK-1212-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
| Id Continuous Drain Current | 25 A | 20 A | 30 A |
| Rds On Drain Source Resistance | 3.2 mOhms | 4.25 mOhms | 2.8 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.1 V | 1.1 V | 1.1 V |
| Vgs Gate Source Voltage | 20 V, - 16 V | 20 V, - 16 V | 20 V, - 16 V |
| Qg Gate Charge | 45 nC | 29 nC | 51 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 28 W | 26.5 W | 39 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
| Packaging | Reel | Reel | Reel |
| Series | SIS | SIS | SIS |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 51 S | 65 S | 52 S |
| Fall Time | 10 ns | 8 ns | 10 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 10 ns | 8 ns | 10 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 25 ns | 18 ns | 27 ns |
| Typical Turn On Delay Time | 10 ns | 9 ns | 10 ns |
| Height | - | - | 1.04 mm |
| Length | - | - | 3.3 mm |
| Width | - | - | 3.3 mm |
| Part # Aliases | - | - | SISA10DN-GE3 |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SISA18ADN-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 | |
| SISA12ADN-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 | ||
| SISA14DN-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 | ||
| SISA10DN-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 | ||
| SISA16DN-T1-GE3 | MOSFET N-Ch PowerPAK1212 | ||
| SISA10DN | New and Original | ||
| SISA10DN-T1 | New and Original | ||
| SISA10DN-T1-E3 | New and Original | ||
| SISA12ADN | New and Original | ||
| SISA12ADN-T1-GT3 | New and Original | ||
| SISA12DN-T1-GE3 | Semiconcuctor, Mosfet, TrenchFET, N-Channel, 30V, 25A, 4.3mohm @ 10V, PowerPAK 1212-8 | ||
| SISA12JN-T1-GE3 | New and Original | ||
| SISA18ADNT1GE3 | Power Field-Effect Transistor, 38.3A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SISA18JN-T1-GE3 | New and Original | ||
Vishay |
SISA10DN-T1-GE3 | MOSFET N-CH 30V 30A 1212-8 | |
| SISA14DN-T1-GE3 | MOSFET N-CH 30V 20A 1212-8 | ||
| SISA16DN-T1-GE3 | MOSFET N-CH 30V D-S PPAK 1212-8 | ||
| SISA18DN-T1-GE3 | MOSFET N-CH 30V 38.3A 1212-8 | ||
| SISA12ADN-T1-GE3 | MOSFET N-CH 30V 25A 1212-8 | ||
| SISA18ADN-T1-GE3 | MOSFET N-CH 30V 38.3A 1212-8 |