PartNumber | SN7002N H6433 | SN7002N H6327 | SN7002N E6327 |
Description | MOSFET SMALL SIGNAL+P-CH | MOSFET N-Ch 60V 200mA SOT-23-3 | MOSFET N-CH 60V 200MA SOT-23 |
Manufacturer | Infineon | Infineon | infineon |
Product Category | MOSFET | MOSFET | FETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | MOSFET (Metal Oxide) |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | PG-SOT-23-3 | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
Id Continuous Drain Current | 200 mA | 200 mA | - |
Rds On Drain Source Resistance | 5 Ohms | 2.5 Ohms | - |
Vgs th Gate Source Threshold Voltage | 800 mV | 800 mV | - |
Vgs Gate Source Voltage | 10 V | 20 V | - |
Qg Gate Charge | 1 nC | 1.5 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 0.36 W | 360 mW | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | Tape & Reel (TR) |
Height | 1.1 mm | 1.1 mm | - |
Length | 2.9 mm | 2.9 mm | - |
Series | XN7002 | SN7002 | SIPMOS |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 1.3 mm | 1.3 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Forward Transconductance Min | 90 mS | 90 mS | - |
Fall Time | 3.6 ns | 3.6 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 3.2 ns | 3.2 ns | - |
Factory Pack Quantity | 10000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 5.3 ns | 5.3 ns | - |
Typical Turn On Delay Time | 2.4 ns | 2.4 ns | - |
Part # Aliases | SN7002NH6433XTMA1 SN72NH6433XT SP000924072 | SN7002NH6327XTSA1 SN72NH6327XT SP000702638 | - |
Unit Weight | 0.000282 oz | 0.000282 oz | - |
Part Status | - | - | Obsolete |
FET Type | - | - | N-Channel |
Drain to Source Voltage (Vdss) | - | - | 60V |
Current Continuous Drain (Id) @ 25°C | - | - | 200mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - | - | 4.5V, 10V |
Vgs(th) (Max) @ Id | - | - | 1.8V @ 26A |
Gate Charge (Qg) (Max) @ Vgs | - | - | 1.5nC @ 10V |
Vgs (Max) | - | - | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | - | - | 45pF @ 25V |
FET Feature | - | - | - |
Power Dissipation (Max) | - | - | 360mW (Ta) |
Rds On (Max) @ Id, Vgs | - | - | 5 Ohm @ 500mA, 10V |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | PG-SOT23-3 |