 |  | |
| PartNumber | SQJ422EP-T1_GE3 | SQJ422EP-T1-GE3 |
| Description | MOSFET -40V 75A 83W AEC-Q101 Qualified | N-CHANNEL 40-V (D-S) 175C MOSF |
| Manufacturer | Vishay | - |
| Product Category | MOSFET | - |
| RoHS | Y | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | PowerPAK-SO-8L-4 | - |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | - |
| Id Continuous Drain Current | 75 A | - |
| Rds On Drain Source Resistance | 2.8 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - |
| Vgs Gate Source Voltage | 20 V | - |
| Qg Gate Charge | 100 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 175 C | - |
| Pd Power Dissipation | 83 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Qualification | AEC-Q101 | - |
| Tradename | TrenchFET | - |
| Packaging | Reel | - |
| Series | SQ | - |
| Transistor Type | 1 N-Channel | - |
| Brand | Vishay / Siliconix | - |
| Forward Transconductance Min | 117 S | - |
| Fall Time | 8 ns | - |
| Product Type | MOSFET | - |
| Rise Time | 10 ns | - |
| Factory Pack Quantity | 3000 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 29 ns | - |
| Typical Turn On Delay Time | 13 ns | - |
| Unit Weight | 0.017870 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQJ422EP-T1_GE3 | MOSFET -40V 75A 83W AEC-Q101 Qualified | |
| SQJ422EP-T1-GE3 | N-CHANNEL 40-V (D-S) 175C MOSF | ||
Vishay |
SQJ422EP-T1_GE3 | MOSFET N-CH 40V 75A PPAK SO-8 |