SS8050BBU

SS8050BBU vs SS8050B

 
PartNumberSS8050BBUSS8050B
DescriptionBipolar Transistors - BJT NPN/40V/1.5A
ManufacturerON SemiconductorFairchild Semiconductor
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single, Pre-Biased
RoHSY-
Mounting StyleThrough HoleThrough Hole
Package / CaseTO-92-3-
Transistor PolarityNPNNPN
ConfigurationSingleSingle
Collector Emitter Voltage VCEO Max25 V-
Collector Base Voltage VCBO40 V-
Emitter Base Voltage VEBO6 V-
Collector Emitter Saturation Voltage0.5 V0.5 V
Maximum DC Collector Current1.5 A1.5 A
Gain Bandwidth Product fT100 MHz100 MHz
Minimum Operating Temperature- 65 C- 65 C
Maximum Operating Temperature+ 150 C+ 150 C
SeriesSS8050-
DC Current Gain hFE Max300300
Height4.7 mm-
Length4.7 mm-
PackagingBulkBulk
Width3.93 mm-
BrandON Semiconductor / Fairchild-
Continuous Collector Current1.5 A1.5 A
DC Collector/Base Gain hfe Min85-
Pd Power Dissipation1 W-
Product TypeBJTs - Bipolar Transistors-
Factory Pack Quantity10000-
SubcategoryTransistors-
Unit Weight0.006314 oz0.006314 oz
Package Case-TO-226-3, TO-92-3 (TO-226AA)
Mounting Type-Through Hole
Supplier Device Package-TO-92-3
Power Max-1W
Transistor Type-NPN
Current Collector Ic Max-1.5A
Voltage Collector Emitter Breakdown Max-25V
DC Current Gain hFE Min Ic Vce-85 @ 100mA, 1V
Vce Saturation Max Ib Ic-500mV @ 80mA, 800mA
Current Collector Cutoff Max-100nA (ICBO)
Frequency Transition-100MHz
Pd Power Dissipation-1 W
Collector Emitter Voltage VCEO Max-25 V
Collector Base Voltage VCBO-40 V
Emitter Base Voltage VEBO-6 V
DC Collector Base Gain hfe Min-85
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
SS8050BBU Bipolar Transistors - BJT NPN/40V/1.5A
SS8050B New and Original
ON Semiconductor
ON Semiconductor
SS8050BBU TRANS NPN 25V 1.5A TO-92
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