PartNumber | SSM6N61NU,LF | SSM6N67NU,LF | SSM6N58NU,LF |
Description | MOSFET Small-signal MOSFET 2 in 1 Nch ID: 4A | MOSFET LowON Res MOSFET ID=4A VDSS=30V | MOSFET N-Ch Sm Sig FET 4A 30V 2-in-1 |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | UDFN-6 | UDFN-6 | UDFN-6 |
Number of Channels | 2 Channel | 2 Channel | 2 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 20 V | 30 V | 30 V |
Id Continuous Drain Current | 4 A | 4 A | 4 A |
Rds On Drain Source Resistance | 108 mOhms | 39.1 mOhms | 112 mOhms |
Vgs th Gate Source Threshold Voltage | 400 mV | 400 mV | 1 V |
Vgs Gate Source Voltage | 8 V | 12 V, - 8 V | - |
Qg Gate Charge | 3.6 nC | 3.2 nC | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 2 W | 1 W | 1 W |
Configuration | Dual | Dual | Dual |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | Reel |
Height | 0.75 mm | - | 0.75 mm |
Length | 2 mm | - | 2 mm |
Product | MOSFETs | - | - |
Series | SSM6N61 | SSM6N67NU | SSM6N58 |
Transistor Type | 2 N-Channel | - | 2 N-Channel |
Type | Silicon N-Channel MOS | - | - |
Width | 2 mm | - | 2 mm |
Brand | Toshiba | Toshiba | Toshiba |
Forward Transconductance Min | 12 S | 6 S | - |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 45 ns | 17 ns | 9 ns |
Typical Turn On Delay Time | 25 ns | 26 ns | 26 ns |
Unit Weight | - | 0.000300 oz | 0.000300 oz |