PartNumber | TK10A60D(STA4,Q,M) | TK10A50D(STA4,Q,M) | TK10A55D(STA4,Q,M) |
Description | MOSFET MOSFET N-ch 600V 10A | MOSFET N-Ch MOS 10A 500V 45W 1050pF 0.72 | MOSFET N-Ch 500V VDSS 700V 45W 1200pF 10A |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220SIS-3 | TO-220FP-3 | TO-220FP-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 500 V | 550 V |
Id Continuous Drain Current | 10 A | 10 A | 10 A |
Rds On Drain Source Resistance | 750 mOhms | 620 mOhms | 720 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 25 nC | 20 nC | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 45 W | 45 W | 45 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | - | - |
Tradename | DTMOSIV | DTMOSIV | DTMOSIV |
Height | 15 mm | 15 mm | 15 mm |
Length | 10 mm | 10 mm | 10 mm |
Series | TK10A60D | TK10A50D | TK10A55D |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Type | Field Effect Transistor Silicon N Channel MOS Type | N-Channel Silicon MOSFET | - |
Width | 4.5 mm | 4.5 mm | 4.5 mm |
Brand | Toshiba | Toshiba | Toshiba |
Forward Transconductance Min | 1.5 S | - | - |
Fall Time | 15 ns | 10 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 22 ns | 25 ns | - |
Factory Pack Quantity | 2500 | 50 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 100 ns | 75 ns | - |
Typical Turn On Delay Time | 55 ns | 60 ns | - |
Unit Weight | 0.211644 oz | 0.080072 oz | - |
Product | - | MOSFET | - |