PartNumber | TK10V60W,LVQ | TK10Q60W,S1VQ | TK10S04K3L(T6L1,NQ |
Description | MOSFET N-Ch DTMOSIV 600 V 88.3W 700pF 9.7A | MOSFET N-Ch DTMOSIV 600 V 80W 700pF 20nC 9.7A | MOSFET N-Ch MOS 10A 40V 25W 410pF 0.028 |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | Through Hole | SMD/SMT |
Package / Case | DFN8x8-5 | TO-251-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 40 V |
Id Continuous Drain Current | 9.7 A | 9.7 A | 10 A |
Rds On Drain Source Resistance | 380 mOhms | 327 mOhms | 28 mOhms |
Pd Power Dissipation | 88.3 W | 80 W | 25 W |
Configuration | Single | Single | Single |
Tradename | DTMOSIV | DTMOSIV | - |
Packaging | Reel | - | Reel |
Height | 0.85 mm | 6.1 mm | 2.3 mm |
Length | 8 mm | 6.65 mm | 6.5 mm |
Series | TK10V60W | TK10Q60W | TK10S04K3L |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 8 mm | 2.3 mm | 5.5 mm |
Brand | Toshiba | Toshiba | Toshiba |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 2500 | 75 | 2000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Vgs th Gate Source Threshold Voltage | - | 3.7 V | - |
Vgs Gate Source Voltage | - | 30 V | - |
Qg Gate Charge | - | 20 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Channel Mode | - | Enhancement | - |
Fall Time | - | 5.5 ns | - |
Rise Time | - | 22 ns | - |
Typical Turn Off Delay Time | - | 75 ns | - |
Typical Turn On Delay Time | - | 45 ns | - |
Unit Weight | - | 0.139332 oz | 0.011993 oz |