TK10P60W

TK10P60W,RVQ vs TK10P60W vs TK10P60W,RVQ(S

 
PartNumberTK10P60W,RVQTK10P60WTK10P60W,RVQ(S
DescriptionMOSFET N-Ch 9.7A 80W FET 600V 700pF 20nCTrans MOSFET N-CH 600V 9.7A 3-Pin(2+Tab) DPAK
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current9.7 A--
Rds On Drain Source Resistance380 mOhms--
Vgs th Gate Source Threshold Voltage3.7 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge20 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation80 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
SeriesTK10P60W--
Transistor Type1 N-Channel--
Width5.5 mm--
BrandToshiba--
Fall Time5.5 ns--
Product TypeMOSFET--
Rise Time22 ns--
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time75 ns--
Typical Turn On Delay Time45 ns--
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
Toshiba
Toshiba
TK10P60W,RVQ MOSFET N-Ch 9.7A 80W FET 600V 700pF 20nC
TK10P60W,RVQ X35 PB-F POWER MOSFET TRANSIST
TK10P60W New and Original
TK10P60W,RVQ(S Trans MOSFET N-CH 600V 9.7A 3-Pin(2+Tab) DPAK
TK10P60WRGELQ(S New and Original
TK10P60WRVQ Trans MOSFET N 600V 9.7A 3-Pin DPAK Emboss T/R - Tape and Reel (Alt: TK10P60W,RVQ)
TK10P60WRVQCT-ND New and Original
TK10P60WRVQDKR-ND New and Original
TK10P60WRVQTR-ND New and Original
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