TK7S10N1Z,LQ

TK7S10N1Z,LQ vs TK7S10N1Z,LQ(O

 
PartNumberTK7S10N1Z,LQTK7S10N1Z,LQ(O
DescriptionMOSFET UMOSVIII 100V 48m max(VGS=10V) DPAK
ManufacturerToshiba-
Product CategoryMOSFET-
RoHSY-
TechnologySi-
Mounting StyleSMD/SMT-
Package / CaseTO-252-3-
Number of Channels1 Channel-
Transistor PolarityN-Channel-
Vds Drain Source Breakdown Voltage100 V-
Id Continuous Drain Current7 A-
Rds On Drain Source Resistance48 mOhms-
Vgs Gate Source Voltage10 V-
ConfigurationSingle-
PackagingReel-
Height2.3 mm-
Length6.5 mm-
SeriesTK7S10N1Z-
Transistor Type1 N-Channel-
Width5.5 mm-
BrandToshiba-
Product TypeMOSFET-
Factory Pack Quantity2000-
SubcategoryMOSFETs-
Unit Weight0.139332 oz-
Manufacturer Part # Description RFQ
Toshiba
Toshiba
TK7S10N1Z,LQ MOSFET UMOSVIII 100V 48m max(VGS=10V) DPAK
TK7S10N1Z,LQ MOSFET UMOSVIII 100V 48m max(VGS=10V) DPAK
TK7S10N1Z,LQ(O New and Original
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