TK7S10N1Z

TK7S10N1Z,LQ vs TK7S10N1Z vs TK7S10N1Z,LQ(O

 
PartNumberTK7S10N1Z,LQTK7S10N1ZTK7S10N1Z,LQ(O
DescriptionMOSFET UMOSVIII 100V 48m max(VGS=10V) DPAK
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current7 A--
Rds On Drain Source Resistance48 mOhms--
Vgs Gate Source Voltage10 V--
ConfigurationSingle--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
SeriesTK7S10N1Z--
Transistor Type1 N-Channel--
Width5.5 mm--
BrandToshiba--
Product TypeMOSFET--
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
Toshiba
Toshiba
TK7S10N1Z,LQ MOSFET UMOSVIII 100V 48m max(VGS=10V) DPAK
TK7S10N1Z,LQ MOSFET UMOSVIII 100V 48m max(VGS=10V) DPAK
TK7S10N1Z New and Original
TK7S10N1Z,LQ(O New and Original
TK7S10N1ZLQ MOSFET MOSFET TRAN DPAK+(OS)
TK7S10N1ZLQCT-ND New and Original
TK7S10N1ZLQDKR-ND New and Original
TK7S10N1ZLQTR-ND New and Original
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