 |  | |
| PartNumber | TP5322N8-G | TP5322N8 |
| Description | MOSFET 220V 12 Ohm 0.7A | MOSFET MOSFET PCh ENHANCE MODE -220V 12 |
| Manufacturer | Microchip | |
| Product Category | MOSFET | FETs - Single |
| RoHS | Y | - |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-89-3 | - |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 220 V | - |
| Id Continuous Drain Current | 260 mA | - |
| Rds On Drain Source Resistance | 12 Ohms | - |
| Vgs Gate Source Voltage | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 1.6 W | - |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Reel |
| Height | 1.6 mm | - |
| Length | 4.6 mm | - |
| Product | MOSFET Small Signal | - |
| Transistor Type | 1 P-Channel | 1 P-Channel |
| Width | 2.6 mm | - |
| Brand | Microchip Technology | - |
| Fall Time | 15 ns | 15 ns |
| Product Type | MOSFET | - |
| Rise Time | 15 ns | 15 ns |
| Factory Pack Quantity | 2000 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 20 ns | 20 ns |
| Typical Turn On Delay Time | 10 ns | 10 ns |
| Unit Weight | 0.001862 oz | 0.001862 oz |
| Package Case | - | SOT-89-3 |
| Pd Power Dissipation | - | 1.6 W |
| Vgs Gate Source Voltage | - | 20 V |
| Id Continuous Drain Current | - | - 260 mA |
| Vds Drain Source Breakdown Voltage | - | - 220 V |
| Rds On Drain Source Resistance | - | 12 Ohms |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Microchip Technology |
TP5322N8-G | MOSFET 220V 12 Ohm 0.7A | |
| TP5322N8-G | MOSFET P-CH 220V 0.26A SOT89-3 | ||
| TP5322N8 | MOSFET MOSFET PCh ENHANCE MODE -220V 12 |