TPH2R608NH,L1Q

TPH2R608NH vs TPH2R608NH L1HQ vs TPH2R608NHL1HQ

 
PartNumberTPH2R608NHTPH2R608NH L1HQTPH2R608NHL1HQ
Description
ManufacturerToshiba Semiconductor and Storage--
Product CategoryFETs - Single--
Series---
PackagingDigi-ReelR Alternate Packaging--
Package Case8-PowerVDFN--
Operating Temperature150°C (TJ)--
Mounting TypeSurface Mount--
Supplier Device Package8-SOP Advance--
FET TypeMOSFET N-Channel, Metal Oxide--
Power Max142W--
Drain to Source Voltage Vdss75V--
Input Capacitance Ciss Vds6000pF @ 37.5V--
FET FeatureStandard--
Current Continuous Drain Id 25°C150A (Tc)--
Rds On Max Id Vgs2.6 mOhm @ 50A, 10V--
Vgs th Max Id4V @ 1mA--
Gate Charge Qg Vgs72nC @ 10V--
Manufacturer Part # Description RFQ
TPH2R608NH New and Original
TPH2R608NH L1HQ New and Original
TPH2R608NHL1HQ New and Original
TPH2R608NHL1Q POWER MOSFET TRANSISTOR
TPH2R608NHL1Q(M New and Original
TPH2R608NHL1QCT-ND New and Original
TPH2R608NHL1QDKR-ND New and Original
TPH2R608NHL1QTR-ND New and Original
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