PartNumber | TSM1NB60SCT A3 | TSM1NB60SCT A3G |
Description | MOSFET 600V 0.5A N Channel Mosfet | MOSFET 600V 0,5Amp N channel Mosfet |
Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | Through Hole | Through Hole |
Package / Case | TO-92-3 | TO-92-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V |
Id Continuous Drain Current | 500 mA | 500 mA |
Rds On Drain Source Resistance | 10 Ohms | 8 Ohms |
Vgs th Gate Source Threshold Voltage | 2.5 V | 2.5 V |
Vgs Gate Source Voltage | 10 V | 10 V |
Qg Gate Charge | 6.1 nC | 6.1 nC |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Pd Power Dissipation | 2.5 W | 2.5 W |
Configuration | Single | Single |
Channel Mode | Enhancement | Enhancement |
Packaging | Ammo Pack | Reel |
Transistor Type | 1 N-Channel | 1 N-Channel |
Brand | Taiwan Semiconductor | Taiwan Semiconductor |
Forward Transconductance Min | 0.8 S | - |
Fall Time | 14.9 ns | 14.9 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 6.8 ns | 6.8 ns |
Factory Pack Quantity | 2000 | 2000 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 15.3 ns | 15.3 ns |
Typical Turn On Delay Time | 7.7 ns | 7.7 ns |
Unit Weight | 0.016000 oz | 0.007654 oz |