PartNumber | TTC004B,Q | TTC012(Q) | TTC0002(Q) |
Description | Bipolar Transistors - BJT NPN 2.5A 1.5W 280 HFE 0.5V Trans | Bipolar Transistors - BJT NPN PWR Amp Trans 2A IC 3A ICP 800V | Bipolar Transistors - BJT NPN PWR Amp Trans 18A 35A 180W 160V |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-126N-3 | - | - |
Transistor Polarity | NPN | NPN | NPN |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 160 V | 375 V | 160 V |
Collector Base Voltage VCBO | 160 V | 800 V | 160 V |
Emitter Base Voltage VEBO | 6 V | 8 V | 5 V |
Collector Emitter Saturation Voltage | 0.5 V | 500 mV | 2 V |
Maximum DC Collector Current | 1.5 A | 2 A | 18 A |
Gain Bandwidth Product fT | 100 MHz | - | 30 MHz |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Series | TTC004B | TTC012 | TTC0002 |
DC Current Gain hFE Max | 280 | 250 at 1 mA, 5 V | 160 |
Brand | Toshiba | Toshiba | Toshiba |
Continuous Collector Current | 1.5 A | - | 18 A |
DC Collector/Base Gain hfe Min | 140 | 80 at 1 mA, 5 V | - |
Pd Power Dissipation | 10 W | 1.1 W | 180 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 250 | 200 | 100 |
Subcategory | Transistors | Transistors | Transistors |
Unit Weight | 3 oz | - | 0.343921 oz |
Packaging | - | Bulk | Bulk |