| PartNumber | ZXMS6006DGTA | ZXMS6005SGTA | ZXMS6005N8Q-13 |
| Description | MOSFET 60V N-CH INTELLIFET 60V VDS Mosfet | MOSFET 60V N-Ch FET FET 2A 480mJ Enh | MOSFET Low Side IntelliFET |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-223-4 | SOT-223-3 | SO-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 65 V | 60 V |
| Id Continuous Drain Current | 2.8 A | 2 A | 2 A |
| Rds On Drain Source Resistance | 100 mOhms | 250 mOhms | 150 mOhms |
| Vgs th Gate Source Threshold Voltage | 700 mV | - | 700 mV |
| Vgs Gate Source Voltage | 5 V | 5 V | 5 V |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 125 C | + 125 C | + 125 C |
| Pd Power Dissipation | 3 W | 1.6 W | 1.65 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | IntelliFET | IntelliFET | IntelliFET |
| Packaging | Reel | Reel | Reel |
| Series | ZXMS6006 | ZXMS6 | ZXMS6005N8Q |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Fall Time | 15 us | 19 us | 19 us |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 18 us | 14 us | 14 us |
| Factory Pack Quantity | 1000 | 1000 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 34 us | 34 us | 34 us |
| Typical Turn On Delay Time | 8.6 us | 6 us | 5 us |
| Unit Weight | 0.003951 oz | 0.003951 oz | - |
| Qualification | - | - | AEC-Q101 |