SIDR610DP-T1-GE3

Name: Vishay - SIDR610DP-T1-GE3
Brand: Vishay
SKU: OMO-3020382
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SIDR610DP-T1-GE3
Manufacturer:: Vishay
Description:: MOSFET N-CHAN 200V PPAK SO-8DC
Lifecycle:: New from this manufacturer.
Datasheet:: SIDR610DP-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: SIDR610DP-T1-GE3 more Information

Product Attribute
Attribute Value

Tags: SIDR6, SIDR, SID

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIDR610DP-T1-GE3 More Information

TrenchFET® Gen IV Top-Side Double Cooling MOSFETs: Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.

Market price

Part #	Mfg.	Description	Stock	Price
SIDR610DP-T1-GE3 DISTI # V99:2348_22587802	Vishay Intertechnologies	N-Channel 200 V (D-S) MOSFET	0
SIDR610DP-T1-GE3 DISTI # SIDR610DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CHAN 200V PPAK SO-8DC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	55In Stock	1000:$1.8601 500:$2.2055 100:$2.5908 10:$3.1620 1:$3.5200
SIDR610DP-T1-GE3 DISTI # SIDR610DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CHAN 200V PPAK SO-8DC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	55In Stock	1000:$1.8601 500:$2.2055 100:$2.5908 10:$3.1620 1:$3.5200
SIDR610DP-T1-GE3 DISTI # SIDR610DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CHAN 200V PPAK SO-8DC RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$1.7199
SIDR610DP-T1-GE3 DISTI # SIDR610DP-T1-GE3	Vishay Intertechnologies	N-CHANNEL 200-V (D-S) MOSFET - Tape and Reel (Alt: SIDR610DP-T1-GE3) RoHS: Compliant Min Qty: 6000 Container: Reel	Americas - 0	60000:$1.4900 18000:$1.5900 30000:$1.5900 6000:$1.6900 12000:$1.6900
SIDR610DP-T1-GE3 DISTI # 99AC0534	Vishay Intertechnologies	MOSFET, N-CH, 200V, 39.6A, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:39.6A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.0239ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes	0	500:$2.0600 250:$2.3000 100:$2.3700 50:$2.5500 25:$2.7200 10:$2.8900 1:$3.4800
SIDR610DP-T1-GE3 DISTI # 81AC3429	Vishay Intertechnologies	N-CHANNEL 200-V (D-S) MOSFET	0	20000:$1.5200 12000:$1.5400 8000:$1.6000 4000:$1.7200 2000:$1.8500 1:$1.9300
SIDR610DP-T1-GE3 DISTI # 78-SIDR610DP-T1-GE3	Vishay Intertechnologies	MOSFET 200V Vds -/+20V Vgs PowerPAK SO-8DC RoHS: Compliant	5934	1:$3.4500 10:$2.8600 100:$2.3500 250:$2.2800 500:$2.0400 1000:$1.7200 3000:$1.6400
SIDR610DP-T1-GE3 DISTI # 3014141	Vishay Intertechnologies	MOSFET, N-CH, 200V, 39.6A, 125W	0	500:£1.4900 250:£1.6700 100:£1.7200 10:£2.0900 1:£2.8400
SIDR610DP-T1-GE3 DISTI # 3014141	Vishay Intertechnologies	MOSFET, N-CH, 200V, 39.6A, 125W RoHS: Compliant	0	1000:$2.2800 500:$2.5000 250:$2.7600 100:$2.9800 10:$3.7400 1:$4.8200

SIDR610DP-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes