OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

SIHB35N60EF-GE3

SIHB35N60EF-GE3
Mfr. #:
SIHB35N60EF-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
Lifecycle:
New from this manufacturer.
Datasheet:
SIHB35N60EF-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SIHB35N60EF-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
32 A
Rds On - Drain-Source Resistance:
97 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
134 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
250 W
Configuration:
Single
Channel Mode:
Enhancement
Series:
EF
Transistor Type:
1 N-Channel EF-Series Power MOSFET
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
8 S
Fall Time:
61 ns
Product Type:
MOSFET
Rise Time:
85 ns
Factory Pack Quantity:
1
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
96 ns
Typical Turn-On Delay Time:
28 ns
Tags
SIHB3, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
EF Series High Voltage Power MOSFETs
Vishay / Siliconix EF Series High Voltage Power MOSFETs with Fast Body Diode are N-Channel power MOSFETs with low reverse recovery charge (Qrr) than standard MOSFETs. The EF power MOSFETs come with low Qrr that allows the devices to avoid failure from shoot-through, thermal overstress, and provide low reverse recovery losses. These devices possess ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
Part # Mfg. Description Stock Price
SIHB35N60EF-GE3
DISTI # V99:2348_22712078		Vishay IntertechnologiesEF Series Power MOSFET with Fast Body Diode D2PAK (TO-263), 97 m @ 10V850
  • 1000:$3.1420
  • 500:$3.7050
  • 100:$4.3430
  • 10:$5.3300
  • 1:$7.0510
SIHB35N60EF-GE3
DISTI # SIHB35N60EF-GE3-ND		Vishay SiliconixMOSFET N-CH D2PAK TO-263
RoHS: Compliant
Min Qty: 1
Container: Bulk		1045In Stock
  • 2500:$3.2399
  • 1000:$3.4104
  • 500:$4.0438
  • 100:$4.7502
  • 10:$5.7980
  • 1:$6.4600
SIHB35N60EF-GE3
DISTI # 32868259		Vishay IntertechnologiesEF Series Power MOSFET with Fast Body Diode D2PAK (TO-263), 97 m @ 10V850
  • 1000:$3.1420
  • 500:$3.7050
  • 100:$4.3430
  • 10:$5.3300
  • 2:$7.0510
SIHB35N60EF-GE3
DISTI # SIHB35N60EF-GE3		Vishay Intertechnologies(Alt: SIHB35N60EF-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€2.5900
  • 500:€2.6900
  • 50:€2.7900
  • 100:€2.7900
  • 25:€3.0900
  • 10:€3.7900
  • 1:€4.8900
SIHB35N60EF-GE3
DISTI # SIHB35N60EF-GE3		Vishay Intertechnologies- Tape and Reel (Alt: SIHB35N60EF-GE3)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$2.8900
  • 6000:$2.9900
  • 4000:$3.0900
  • 2000:$3.1900
  • 1000:$3.2900
SIHB35N60EF-GE3
DISTI # 99AC9553		Vishay IntertechnologiesMOSFET, N-CH, 32A, 600V, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:32A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.084ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes50
  • 500:$3.8900
  • 250:$4.3300
  • 100:$4.4700
  • 50:$4.7900
  • 25:$5.1100
  • 10:$5.4300
  • 1:$6.5500
SIHB35N60EF-GE3
DISTI # 78-SIHB35N60EF-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		1050
  • 1:$6.4900
  • 10:$5.3800
  • 100:$4.4300
  • 250:$4.2900
  • 500:$3.8500
  • 1000:$3.2400
  • 2500:$3.0800
SIHB35N60EF-GE3
DISTI # 3019078		Vishay IntertechnologiesMOSFET, N-CH, 32A, 600V, TO-263
RoHS: Compliant		50
  • 1000:$4.1200
  • 500:$4.5300
  • 250:$5.0800
  • 100:$5.3200
  • 10:$6.3700
  • 1:$8.1700
SIHB35N60EF-GE3
DISTI # 3019078		Vishay IntertechnologiesMOSFET, N-CH, 32A, 600V, TO-26350
  • 500:£2.7900
  • 250:£3.1200
  • 100:£3.2100
  • 10:£3.9000
  • 1:£5.1800
Image Part # Description
SIHB35N60EF-GE3

Mfr.#: SIHB35N60EF-GE3

OMO.#: OMO-SIHB35N60EF-GE3

 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
SIHB35N60E-GE3

Mfr.#: SIHB35N60E-GE3

OMO.#: OMO-SIHB35N60E-GE3-VISHAY

 MOSFET N-CH 600V 32A D2PAK TO263
SIHB35N60EF-GE3

Mfr.#: SIHB35N60EF-GE3

OMO.#: OMO-SIHB35N60EF-GE3-VISHAY

 EF Series Power MOSFET with Fast Body Diode D2PAK (TO-263), 97 m @ 10V
Availability
Stock:
Available
On Order:
1984
Enter Quantity:
Current price of SIHB35N60EF-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$6.49
$6.49
10
$5.38
$53.80
100
$4.43
$443.00
250
$4.29
$1 072.50
500
$3.85
$1 925.00
1000
$3.24
$3 240.00
2500
$3.08
$7 700.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Start with
Newest Products
  • -12 V and -20 V P-Channel Gen III MOSFETs
    -12 V and -20 V P-Channel Gen III MOSFETs
    Vishay's TrenchFET® MOSFETs features low on-resistance for -12 V and -20 V devices, allowing for lower voltage drops.
  • DG2788A Dual DPDT / Quad SPDT Analog Switch
    DG2788A Dual DPDT / Quad SPDT Analog Switch
    Vishay introduces the dual DPDT / quad SPDT analog switch featuring low resistance of 0.37 Ω at 2.7 V in the compact 2.6 mm x 1.8 mm x 0.55 mm miniQFN16 package.
  • Smart Load Switches
    Smart Load Switches
    Vishay's smart load switch features a simplified GPIO control can be used to implement power distribution and sequencing of multiple-sub-systems.
  • SUM70101EL 100 V P-Channel MOSFET
    SUM70101EL 100 V P-Channel MOSFET
    Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
  • Compare SIHB35N60EF-GE3
    Compare SIHB35N60EF-GE3
    SIHB30N60AELGE3 vs SIHB30N60E vs SIHB30N60EE3
  • DGQ2788A AEC-Q100 Qualified Analog Switch
    DGQ2788A AEC-Q100 Qualified Analog Switch
    The wide operation voltage range, low resistance, and high bandwidth of Vishay Siliconix's DGQ2788A make it ideal for a variety of design needs, simplifying the BOM.
More Newest Products
Top