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IRF200P222

IRF200P222
Mfr. #:
IRF200P222
Manufacturer:
Infineon Technologies
Description:
MOSFET IFX OPTIMOS
Lifecycle:
New from this manufacturer.
Datasheet:
IRF200P222 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IRF200P222 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-247AC-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
200 V
Id - Continuous Drain Current:
182 A
Rds On - Drain-Source Resistance:
6.6 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
203 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
StrongIRFET
Packaging:
Tube
Transistor Type:
1 N-Channel
Brand:
Infineon Technologies
Forward Transconductance - Min:
142 S
Fall Time:
97 ns
Product Type:
MOSFET
Rise Time:
96 ns
Factory Pack Quantity:
400
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
77 ns
Typical Turn-On Delay Time:
25 ns
Part # Aliases:
SP001582092
Unit Weight:
0.211644 oz
Tags
IRF200, IRF20, IRF2, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET N-CH 200V 182A 3-Pin TO-247AC Tube
***ure Electronics
Single N-Channel 200 V 6.6 mOhm 135 nC StrongIRFET™ IR Mosfet - TO-247AC
***ical
Trans MOSFET N-CH 200V 182A 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans MOSFET N-CH 200V 182A Strong RFET 3TO-247AC
***i-Key
MOSFET N-CH 200V 182A TO247AC
***ark
Mosfet, N-Ch, 200V, 182A, 556W, To-247Ac; Transistor Polarity:n Channel; Continuous Drain Current Id:182A; Drain Source Voltage Vds:200V; On Resistance Rds(On):0.0053Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ineon
Target Applications: UPS and Inverter applications Half-bridge and full-bridge topologies Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power switches Brushed and BLDC Motor drive applications Battery powered circuits
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 200V, 182A, 556W, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:182A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.0053ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:556W; Transistor Case Style:TO-247AC; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:StrongIRFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET CAN N, 200V, 182A, 556W, TO-247AC; Polarità Transistor:Canale N; Corrente Continua di Drain Id:182A; Tensione Drain Source Vds:200V; Resistenza di Attivazione Rds(on):0.0053ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:556W; Modello Case Transistor:TO-247AC; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:StrongIRFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
Light Electric Vehicles (LEV)
Infineon Light Electric Vehicles have world-changing potential utilizing the emission-free solution for rising megacities. LEV's apply new technology enabling greater power efficiency, smaller size, lighter weight, and lower cost solutions. LEVs cost less when compared to gasoline or battery powered EVs, making them affordable and hence attractive to emerging markets, where a transition to electrified mobility is in progress.
StrongIRFET™ Power MOSFETs
Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 
Part # Mfg. Description Stock Price
IRF200P222
DISTI # V99:2348_17072163		Infineon Technologies AGIFX OPTIMOS107
  • 250:$9.1580
  • 100:$9.6400
  • 25:$10.7929
  • 10:$11.2840
  • 1:$12.1870
IRF200P222
DISTI # IRF200P222-ND		Infineon Technologies AGMOSFET N-CH 200V 182A TO247AC
RoHS: Compliant
Min Qty: 1
Container: Tube		579In Stock
  • 400:$11.3268
  • 10:$14.6150
  • 1:$16.0800
IRF200P222
DISTI # 30644455		Infineon Technologies AGIFX OPTIMOS400
  • 100:$12.4185
  • 50:$13.7700
  • 10:$14.4075
  • 5:$15.4275
  • 2:$16.8300
IRF200P222
DISTI # 26688434		Infineon Technologies AGIFX OPTIMOS107
  • 100:$9.6400
  • 25:$10.7929
  • 10:$11.2840
  • 1:$12.1870
IRF200P222
DISTI # IRF200P222		Infineon Technologies AGTrans MOSFET N-CH 200V 182A Strong RFET 3TO-247AC (Alt: IRF200P222)
RoHS: Compliant
Min Qty: 400		Asia - 0
    IRF200P222
    DISTI # IRF200P222    		Infineon Technologies AGTrans MOSFET N-CH 200V 182A Strong RFET 3TO-247AC - Rail/Tube (Alt: IRF200P222)
    RoHS: Compliant
    Min Qty: 400
    Container: Tube    		Americas - 0
    • 400:$7.5900
    • 800:$7.2900
    • 1600:$7.0900
    • 2400:$6.7900
    • 4000:$6.6900
    IRF200P222
    DISTI # 726-IRF200P222    		Infineon Technologies AGMOSFET IFX OPTIMOS
    RoHS: Compliant    		998
    • 1:$13.9500
    • 10:$12.8300
    • 25:$12.3000
    • 100:$10.8300
    • 250:$10.3000
    IRF200P222
    DISTI # IRF200P222    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,200V,129A,556W,TO247AC5
    • 1:$14.8100
    • 3:$13.3100
    • 10:$11.8200
    • 25:$10.5900
    IRF200P222
    DISTI # C1S322000688001    		Infineon Technologies AGMOSFETs400
    • 200:$9.5000
    • 100:$9.7400
    • 50:$10.8000
    • 10:$11.3000
    • 5:$12.1000
    • 1:$13.2000
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    Availability
    Stock:
    Available
    On Order:
    1984
    Enter Quantity:
    Current price of IRF200P222 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $7.43
    $7.43
    10
    $6.71
    $67.10
    25
    $6.40
    $160.00
    100
    $5.56
    $556.00
    250
    $5.31
    $1 327.50
    500
    $4.84
    $2 420.00
    1000
    $4.46
    $4 460.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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