PartNumber | IRF200P222 | IRF200B211 | IRF200P223 |
Description | MOSFET IFX OPTIMOS | MOSFET TRENCH_MOSFETS | MOSFET IFX OPTIMOS |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247AC-3 | TO-220-3 | TO-247AC-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 200 V | 200 V | 200 V |
Id Continuous Drain Current | 182 A | 12 A | 100 A |
Rds On Drain Source Resistance | 6.6 mOhms | 170 mOhms | 11.5 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | 3 V | 2 V |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 203 nC | 15.3 nC | 102 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | StrongIRFET | StrongIRFET | StrongIRFET |
Packaging | Tube | Tube | Tube |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Forward Transconductance Min | 142 S | 13 S | 93 S |
Fall Time | 97 ns | 6.5 ns | 62 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 96 ns | 9.5 ns | 66 ns |
Factory Pack Quantity | 400 | 1000 | 400 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 77 ns | 11.3 ns | 55 ns |
Typical Turn On Delay Time | 25 ns | 6.5 ns | 16 ns |
Part # Aliases | SP001582092 | SP001561622 | SP001582440 |
Unit Weight | 0.211644 oz | 0.081130 oz | 0.211644 oz |
Pd Power Dissipation | - | 80 W | 313 W |
Height | - | 15.65 mm | - |
Length | - | 10 mm | - |
Width | - | 4.4 mm | - |
Moisture Sensitive | - | - | Yes |