FCD380N60E

Mfr. #:: FCD380N60E
Manufacturer:: ON Semiconductor
Description:: MOSFET N CH 600V 10.2A DPAK
Lifecycle:: New from this manufacturer.
Datasheet:: FCD380N60E Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

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Tags: FCD3, FCD

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FCD380N60E Description

***Semiconductor: N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 10.2 A, 380 mΩ, DPAK

***ure Electronics: N-Channel 600 V 380 mO Surface Mount SuperFET II Easy Drive Mosfet -TO-252

***p One Stop Global: Trans MOSFET N-CH 600V 10.2A 3-Pin(2+Tab) TO-252 T/R

***ark: SuperFET2 380mohm, TO252 - TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB

***et Europe: Trans MOSFET N-CH 600V 10.2A 3-Pin DPAK T/R

***Components: MOSFET N-Ch SuperFET II 600V 10.2A DPAK

***ical: Trans MOSFET N-CH 600V 10.2A T/R

***i-Key: MOSFET N CH 600V 10.2A DPAK

***et: SUPERFET2 380MOHM, TO252

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 600V, 10.2A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:10.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.32ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:106W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:SuperFET II Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)

***nell: MOSFET, CA-N, 600V 10,2A, TO-252-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:10.2A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.32ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:106W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:SuperFET II Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Market price

Part #	Mfg.	Description	Stock	Price
FCD380N60E DISTI # V72:2272_06337701	ON Semiconductor	Trans MOSFET N-CH 600V 10.2A 3-Pin(2+Tab) DPAK T/R	2500	1000:$0.8777 500:$1.0141 250:$1.1024 100:$1.2248 25:$1.5097 10:$1.5301 1:$1.9742
FCD380N60E DISTI # V36:1790_06337701	ON Semiconductor	Trans MOSFET N-CH 600V 10.2A 3-Pin(2+Tab) DPAK T/R	0	2500:$0.8567
FCD380N60E DISTI # FCD380N60ECT-ND	ON Semiconductor	MOSFET N CH 600V 10.2A DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3735In Stock	1000:$0.9660 500:$1.1659 100:$1.4190 10:$1.7650 1:$1.9700
FCD380N60E DISTI # FCD380N60EDKR-ND	ON Semiconductor	MOSFET N CH 600V 10.2A DPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3735In Stock	1000:$0.9660 500:$1.1659 100:$1.4190 10:$1.7650 1:$1.9700
FCD380N60E DISTI # FCD380N60ETR-ND	ON Semiconductor	MOSFET N CH 600V 10.2A DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	5000:$0.8408 2500:$0.8732
FCD380N60E DISTI # 32702549	ON Semiconductor	Trans MOSFET N-CH 600V 10.2A 3-Pin(2+Tab) DPAK T/R	2500	9:$1.9742
FCD380N60E DISTI # 32711099	ON Semiconductor	Trans MOSFET N-CH 600V 10.2A 3-Pin(2+Tab) DPAK T/R	2500	2500:$0.8219
FCD380N60E DISTI # FCD380N60E	ON Semiconductor	Trans MOSFET N-CH 600V 10.2A 3-Pin DPAK T/R (Alt: FCD380N60E) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.7139 15000:€0.7649 10000:€0.8239 5000:€0.8919 2500:€1.0709
FCD380N60E DISTI # FCD380N60E	ON Semiconductor	Trans MOSFET N-CH 600V 10.2A 3-Pin DPAK T/R - Tape and Reel (Alt: FCD380N60E) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.7599 15000:$0.7789 10000:$0.7889 5000:$0.7999 2500:$0.8049
FCD380N60E DISTI # FCD380N60E	ON Semiconductor	Trans MOSFET N-CH 600V 10.2A 3-Pin DPAK T/R (Alt: FCD380N60E) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0	125000:$1.0098 62500:$1.0267 25000:$1.0621 12500:$1.1000 7500:$1.1407 5000:$1.1846 2500:$1.2320
FCD380N60E DISTI # 46AC0750	ON Semiconductor	MOSFET, N-CH, 600V, 10.2A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:10.2A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.32ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes	2057	1000:$1.0500 500:$1.2400 250:$1.3200 100:$1.3900 50:$1.4900 25:$1.6000 10:$1.7000 1:$1.9800
FCD380N60E DISTI # 63W2839	ON Semiconductor	SF2 600V 380MOHM E DPAK / REEL	0	25000:$0.6730 10000:$0.6930 2500:$0.7190 1:$0.7250
FCD380N60E DISTI # 512-FCD380N60E	ON Semiconductor	MOSFET 600V N-Channel MOSFET RoHS: Compliant	2416	1:$1.8100 10:$1.5400 100:$1.2300 500:$1.0700 1000:$0.8930 2500:$0.8800
FCD380N60E	Fairchild Semiconductor Corporation		828
FCD380N60E	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 10.2A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant	1998
FCD380N60E DISTI # 2825202	ON Semiconductor	MOSFET, N-CH, 600V, 10.2A, TO-252-3 RoHS: Compliant	2057	5000:$1.1700 1000:$1.2100 500:$1.3100 250:$1.5900 100:$1.9400 25:$2.8400 5:$3.3100
FCD380N60E DISTI # 2825202	ON Semiconductor	MOSFET, N-CH, 600V, 10.2A, TO-252-3	4577	500:£0.8240 250:£0.8840 100:£0.9440 10:£1.2200 1:£1.5900

FCD380N60E

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes