2SA1163-BL(TE85L

2SA1163-BL(TE85L,F vs 2SA1163-BL(TE85L,F)

 
PartNumber2SA1163-BL(TE85L,F2SA1163-BL(TE85L,F)
DescriptionBipolar Transistors - BJT PNP Trans -0.1A LN -120V VCEOTrans GP BJT PNP 120V 0.1A 3-Pin S-Mini T/R
ManufacturerToshiba-
Product CategoryBipolar Transistors - BJT-
RoHSY-
Mounting StyleSMD/SMT-
Package / CaseSOT-346-3-
Transistor PolarityPNP-
ConfigurationSingle-
Collector Emitter Voltage VCEO Max- 120 V-
Collector Base Voltage VCBO- 120 V-
Emitter Base Voltage VEBO- 5 V-
Collector Emitter Saturation Voltage- 0.3 V-
Maximum DC Collector Current- 100 mA-
Gain Bandwidth Product fT100 MHz-
Series2SA1163-
DC Current Gain hFE Max700-
PackagingReel-
BrandToshiba-
Continuous Collector Current- 100 mA-
DC Collector/Base Gain hfe Min200-
Pd Power Dissipation150 mW-
Product TypeBJTs - Bipolar Transistors-
Factory Pack Quantity3000-
SubcategoryTransistors-
Manufacturer Part # Description RFQ
Toshiba
Toshiba
2SA1163-BL(TE85L,F Bipolar Transistors - BJT PNP Trans -0.1A LN -120V VCEO
2SA1163-BL(TE85L,F Bipolar Transistors - BJT PNP Trans -0.1A LN -120V VCEO
2SA1163-BL(TE85L,F) Trans GP BJT PNP 120V 0.1A 3-Pin S-Mini T/R
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