BSP322PH

BSP322PH6327XTSA1 vs BSP322PH6327

 
PartNumberBSP322PH6327XTSA1BSP322PH6327
DescriptionMOSFET P-Ch -100V 1A SOT-223-3
ManufacturerInfineonInfineon Technologies
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single
RoHSY-
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CasePG-SOT-223-4-
Number of Channels1 Channel1 Channel
Transistor PolarityP-ChannelP-Channel
Vds Drain Source Breakdown Voltage100 V-
Id Continuous Drain Current1 A-
Rds On Drain Source Resistance800 mOhms-
Vgs th Gate Source Threshold Voltage2 V-
Vgs Gate Source Voltage10 V-
Qg Gate Charge12.4 nC-
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation1.8 W-
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
PackagingReelReel
Height1.6 mm-
Length6.5 mm-
SeriesBSP322BSP322
Transistor Type1 P-Channel1 P-Channel
Width3.5 mm-
BrandInfineon Technologies-
Forward Transconductance Min0.7 S-
Fall Time8.3 ns8.3 ns
Product TypeMOSFET-
Rise Time4.3 ns4.3 ns
Factory Pack Quantity1000-
SubcategoryMOSFETs-
Typical Turn Off Delay Time21.2 ns21.2 ns
Typical Turn On Delay Time4.6 ns4.6 ns
Part # AliasesBSP322P H6327 SP001058784-
Unit Weight0.003951 oz0.008826 oz
Part Aliases-BSP322P H6327 SP001058784
Package Case-SOT-223-4
Pd Power Dissipation-1.8 W
Vgs Gate Source Voltage-+/- 20 V
Id Continuous Drain Current-- 1 A
Vds Drain Source Breakdown Voltage-- 100 V
Vgs th Gate Source Threshold Voltage-- 2 V
Rds On Drain Source Resistance-1 Ohms
Qg Gate Charge-12.4 nC
Forward Transconductance Min-0.7 S
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSP322PH6327XTSA1 MOSFET P-Ch -100V 1A SOT-223-3
BSP322PH6327XTSA1 MOSFET P-CH 100V 1A SOT-223
BSP322PH6327 New and Original
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