PartNumber | CGHV35060MP | CGHV31500F | CGHV31500F-TB |
Description | RF JFET Transistors GaN HEMT 2.7-3.1GHz, 60 Watt | RF MOSFET HEMT 50V 440217 | TEST FIXTURE FOR CGHV31500F |
Manufacturer | Cree, Inc. | - | - |
Product Category | RF JFET Transistors | - | - |
RoHS | Y | - | - |
Transistor Type | HEMT | - | - |
Technology | GaN | - | - |
Gain | 14.5 dB | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 150 V | - | - |
Vgs Gate Source Breakdown Voltage | - 10 V, 2 V | - | - |
Id Continuous Drain Current | 10.4 A | - | - |
Output Power | 75 W | - | - |
Maximum Drain Gate Voltage | 50 V | - | - |
Minimum Operating Temperature | - 40 C | - | - |
Maximum Operating Temperature | + 107 C | - | - |
Pd Power Dissipation | 52 W | - | - |
Mounting Style | SMD/SMT | - | - |
Packaging | Reel | - | - |
Application | S Band Radar and LTE base stations | - | - |
Configuration | Single | - | - |
Operating Frequency | 3.5 GHz | - | - |
Operating Temperature Range | - 40 C to + 107 C | - | - |
Brand | Wolfspeed / Cree | - | - |
Product Type | RF JFET Transistors | - | - |
Factory Pack Quantity | 250 | - | - |
Subcategory | Transistors | - | - |
Vgs th Gate Source Threshold Voltage | - 3 V | - | - |