HMC667

HMC667LP2ETR vs HMC667LP2E vs HMC667LP2

 
PartNumberHMC667LP2ETRHMC667LP2EHMC667LP2
DescriptionRF Amplifier SMT lo Noise amp, 2.3 to 2.7 GHzRF Amplifier SMT lo Noise amp 2.3 to 2.7 GHzIC RF AMP GP 2.3GHZ-2.7GHZ 6DFN
ManufacturerAnalog Devices Inc.Analog Devices Inc.Analog Devices Inc.
Product CategoryRF AmplifierRF AmplifiersRF Amplifiers
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseDFN-6--
TypeLow Noise AmplifierLow Noise Amplifier-
TechnologyGaAsGaAs-
Operating Frequency2.3 GHz to 2.7 GHz2.3 GHz to 2.7 GHz-
P1dB Compression Point16.5 dBm--
Gain19 dB19dB19dB
Operating Supply Voltage5 V5 V-
NF Noise Figure0.75 dB--
OIP3 Third Order Intercept29.5 dBm--
Operating Supply Current59 mA59 mA-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 85 C+ 85 C-
SeriesHMC667HMC667-
PackagingReelCut Strip Alternate PackagingCut Strip Alternate Packaging
BrandAnalog Devices / Hittite--
Number of Channels1 Channel1 Channel-
Input Return Loss12 dB12 dB-
Pd Power Dissipation0.38 W--
Product TypeRF Amplifier--
Factory Pack Quantity500--
SubcategoryWireless & RF Integrated Circuits--
Unit Weight0.000744 oz21100 mg-
Package Case-6-VFDFN Exposed Pad6-VFDFN Exposed Pad
Frequency-2.3GHz ~ 2.7GHz2.3GHz ~ 2.7GHz
Frequency Range-2.3 GHz to 2.7 GHz-
Voltage Supply-3 V ~ 5 V3 V ~ 5 V
Supplier Device Package-6-DFN (2x2)6-DFN (2x2)
Current Supply-59mA59mA
Test Frequency---
P1dB-16.5dB16.5dB
Noise Figure-0.9dB0.9dB
RF Type-General PurposeGeneral Purpose
Pd Power Dissipation-0.38 W-
NF Noise Figure-0.75 dB-
P1dB Compression Point-16.5 dbm-
OIP3 Third Order Intercept-29.5 dBm-
Manufacturer Part # Description RFQ
Analog Devices / Hittite
Analog Devices / Hittite
HMC667LP2ETR RF Amplifier SMT lo Noise amp, 2.3 to 2.7 GHz
Analog Devices Inc.
Analog Devices Inc.
HMC667LP2ETR RF Amplifier SMT lo Noise amp 2.3 to 2.7 GHz
HMC667LP2E RF Amplifier SMT lo Noise amp 2.3 to 2.7 GHz
HMC667LP2TR IC RF AMP GP 2.3GHZ-2.7GHZ 6DFN
HMC667LP2 IC RF AMP GP 2.3GHZ-2.7GHZ 6DFN
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