PartNumber | IRFPE50PBF | IRFPE50PBF,IRFPE50,FPE50 |
Description | MOSFET N-CH 800V HEXFET MOSFET | |
Manufacturer | Vishay | - |
Product Category | MOSFET | - |
RoHS | E | - |
Technology | Si | - |
Mounting Style | Through Hole | - |
Package / Case | TO-247AC-3 | - |
Number of Channels | 1 Channel | - |
Transistor Polarity | N-Channel | - |
Vds Drain Source Breakdown Voltage | 800 V | - |
Id Continuous Drain Current | 7.8 A | - |
Rds On Drain Source Resistance | 1.2 Ohms | - |
Vgs th Gate Source Threshold Voltage | 2 V | - |
Vgs Gate Source Voltage | 10 V | - |
Qg Gate Charge | 200 nC | - |
Minimum Operating Temperature | - 55 C | - |
Maximum Operating Temperature | + 150 C | - |
Pd Power Dissipation | 190 W | - |
Configuration | Single | - |
Channel Mode | Enhancement | - |
Packaging | Tube | - |
Height | 20.82 mm | - |
Length | 15.87 mm | - |
Series | IRFPE | - |
Transistor Type | 1 N-Channel | - |
Width | 5.31 mm | - |
Brand | Vishay / Siliconix | - |
Forward Transconductance Min | 5.6 S | - |
Fall Time | 39 ns | - |
Product Type | MOSFET | - |
Rise Time | 38 ns | - |
Factory Pack Quantity | 500 | - |
Subcategory | MOSFETs | - |
Typical Turn Off Delay Time | 120 ns | - |
Typical Turn On Delay Time | 19 ns | - |
Unit Weight | 1.340411 oz | - |