PartNumber | SQ1922AEEH-T1_GE3 | SQ1920 | SQ1922EEH-T1-GE3 |
Description | MOSFET Dual Nch 20V Vds SOT-363 | ||
Manufacturer | Vishay | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-363-6 | - | - |
Number of Channels | 2 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 20 V | - | - |
Id Continuous Drain Current | 0.85 A | - | - |
Rds On Drain Source Resistance | 300 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
Vgs Gate Source Voltage | 12 V | - | - |
Qg Gate Charge | 1.2 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 1.5 W | - | - |
Configuration | Dual | - | - |
Channel Mode | Enhancement | - | - |
Tradename | TrenchFET | - | - |
Packaging | Reel | - | - |
Series | SQ | - | - |
Transistor Type | 2 N-Channel | - | - |
Brand | Vishay / Siliconix | - | - |
Fall Time | 6 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 9.6 ns | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 8 ns | - | - |
Typical Turn On Delay Time | 10 ns | - | - |