STW48N60M2

STW48N60M2 vs STW48N60M2-4

 
PartNumberSTW48N60M2STW48N60M2-4
DescriptionMOSFET N-channel 600 V, 0.06 Ohm typ., 42 A MDmesh M2 Power MOSFET in TO-247 packageMOSFET N-channel 600 V, 0.06 Ohm typ., 42 A MDmesh M2 Power MOSFET in TO247-4 package
ManufacturerSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-4
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V600 V
Id Continuous Drain Current42 A42 A
Rds On Drain Source Resistance70 mOhms60 mOhms
Vgs th Gate Source Threshold Voltage2 V2 V
Vgs Gate Source Voltage25 V25 V
Qg Gate Charge70 nC70 nC
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation300 W300 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
TradenameMDmeshMDmesh
PackagingTubeTube
SeriesSTW48N60M2STW48N60M2-4
BrandSTMicroelectronicsSTMicroelectronics
Fall Time119 ns119 ns
Product TypeMOSFETMOSFET
Rise Time17 ns17 ns
Factory Pack Quantity600600
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time13 ns13 ns
Typical Turn On Delay Time18.5 ns18.5 ns
Unit Weight1.340411 oz-
Transistor Type-1 N-Channel
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STW48N60M2 MOSFET N-channel 600 V, 0.06 Ohm typ., 42 A MDmesh M2 Power MOSFET in TO-247 package
STW48N60M2-4 MOSFET N-channel 600 V, 0.06 Ohm typ., 42 A MDmesh M2 Power MOSFET in TO247-4 package
STW48N60M2 MOSFET N-CH 600V 42A TO-247
STW48N60M2-4 MOSFET N-CH 600V 42A TO247-4
STW48N60M2-4 48N60M2 New and Original
STW48N60M24 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Top