FDP3652

Mfr. #:: FDP3652
Manufacturer:: ON Semiconductor / Fairchild
Description:: MOSFET 100V 61a 0.016 Ohm
Lifecycle:: New from this manufacturer.
Datasheet:: FDP3652 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 100 V

Id - Continuous Drain Current:: 61 A

Rds On - Drain-Source Resistance:: 14 mOhms

Vgs - Gate-Source Voltage:: 20 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 150 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Tube

Height:: 16.3 mm

Length:: 10.67 mm

Series:: FDP3652

Transistor Type:: 1 N-Channel

Type:: MOSFET

Width:: 4.7 mm

Brand:: ON Semiconductor / Fairchild

Fall Time:: 45 ns

Product Type:: MOSFET

Rise Time:: 85 ns

Factory Pack Quantity:: 800

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 26 ns

Typical Turn-On Delay Time:: 12 ns

Part # Aliases:: FDP3652_NL

Unit Weight:: 0.063493 oz

Tags: FDP3652, FDP365, FDP36, FDP3, FDP

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDP3652 Description

***p One Stop Japan: Trans MOSFET N-CH 100V 9A Automotive 3-Pin(3+Tab) TO-220AB Tube

***p One Stop Global: Trans MOSFET N-CH 100V 9A 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: N-Channel 100 V 16 mO PowerTrench Mosfet - TO-220AB

***Semiconductor: N-Channel PowerTrench® MOSFET, 100V, 61A, 16mΩ

***inecomponents.com: TO-220AB, SINGLE, N-CH, 100V, 16MOHM PWR ULTRAFET TRENCH MOS

***Components: MOSFET N-CHANNEL 100V 9A TO220AB

*** Source Electronics: MOSFET N-CH 100V 61A TO-220AB

***eco: FDP3652.,3 LD PLASTIC W/EXPOSE D HEATSNK <AZ

***ser: MOSFETs 100V, 61a, 0.016 Ohm

***ark: Transistor Polarity:n Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.014Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:150W; No. Of Pins:3Pins Rohs Compliant: Yes

***nell: MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:61A; Resistance, Rds On:0.014ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Avalanche Single Pulse Energy Eas:182mJ; Current, Idm Pulse:70A; Lead Spacing:2.54mm; No. of Pins:3; Pin Configuration:a; Pin Format:1G, (2+Tab)D, 3S; Power Dissipation:150W; Power, Pd:150W; Power, Ptot:150W; Resistance, Rds on @ Vgs = 10V:0.014ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, trr Typ:62ns; Transistors, No. of:1; Typ Capacitance Ciss:2880pF; Voltage, Vds Max:100V; Voltage, Vgs th Max:4V; Voltage, Vgs th Min:2V

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:100V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:182mJ; Capacitance Ciss Typ:2880pF; Current Id Max:61A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:14mohm; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1G, (2+Tab)D, 3S; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Power Dissipation Ptot Max:150W; Pulse Current Idm:70A; Reverse Recovery Time trr Typ:62ns; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

Market price

Part #	Mfg.	Description	Stock	Price
FDP3652 DISTI # V36:1790_06359472	ON Semiconductor	FET 100V 16.0 MOHM TO220	12113	5000:$0.7903 2500:$0.7990 1000:$0.8540 500:$1.0174 100:$1.1278 10:$1.4022 1:$1.6158
FDP3652 DISTI # V79:2366_18816080	ON Semiconductor	FET 100V 16.0 MOHM TO220	222	5000:$0.7903 2500:$0.7990 1000:$0.8540 500:$1.0174 100:$1.1278 10:$1.4022 1:$1.6158
FDP3652 DISTI # FDP3652-ND	ON Semiconductor	MOSFET N-CH 100V 61A TO-220AB RoHS: Compliant Min Qty: 1 Container: Bulk	30In Stock	1000:$1.2530 500:$1.5123 100:$1.9444 10:$2.4200 1:$2.6800
FDP3652 DISTI # 26163598	ON Semiconductor	FET 100V 16.0 MOHM TO220	12113	5000:$0.7903 2500:$0.7990 1000:$0.8540 500:$1.0174 100:$1.1278 10:$1.4022 8:$1.6158
FDP3652 DISTI # 26122911	ON Semiconductor	FET 100V 16.0 MOHM TO220	222	5000:$0.7903 2500:$0.7990 1000:$0.8540 500:$1.0174 100:$1.1278 15:$1.4022
FDP3652 DISTI # 30702593	ON Semiconductor	FET 100V 16.0 MOHM TO220	32	16:$0.6217
FDP3652 DISTI # FDP3652	ON Semiconductor	Trans MOSFET N-CH 100V 9A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: FDP3652) RoHS: Compliant Min Qty: 288 Container: Bulk	Americas - 0	288:$0.8099 290:$0.8049 578:$0.7939 1440:$0.7839 2880:$0.7649
FDP3652 DISTI # FDP3652	ON Semiconductor	Trans MOSFET N-CH 100V 9A 3-Pin(3+Tab) TO-220AB Rail (Alt: FDP3652) RoHS: Compliant Min Qty: 800	Asia - 0	800:$1.3662 1600:$1.3136 2400:$1.2650 4000:$1.2198 8000:$1.1778 20000:$1.1385 40000:$1.1198
FDP3652 DISTI # FDP3652	ON Semiconductor	Trans MOSFET N-CH 100V 9A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FDP3652) RoHS: Compliant Min Qty: 800 Container: Tube	Americas - 0	800:$1.0067 1600:$1.0001 3200:$0.9873 4800:$0.9748 8000:$0.9507
FDP3652 DISTI # FDP3652	ON Semiconductor	Trans MOSFET N-CH 100V 9A 3-Pin(3+Tab) TO-220AB Rail (Alt: FDP3652) RoHS: Compliant Min Qty: 1	Europe - 0	1:€0.9299 10:€0.8269 25:€0.7439 50:€0.6759 100:€0.6199 500:€0.5719
FDP3652. DISTI # 15AC2932	Fairchild Semiconductor Corporation	Transistor Polarity:N Channel,Continuous Drain Current Id:61A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.014ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:150W,No. of Pins:3Pins RoHS Compliant: Yes	12	8000:$0.9500 4800:$0.9740 3200:$0.9870 1600:$1.0000 1:$1.0100
FDP3652 DISTI # 512-FDP3652	ON Semiconductor	MOSFET 100V 61a 0.016 Ohm RoHS: Compliant	7	1:$2.3100 10:$1.9600 100:$1.5700 500:$1.3700 1000:$1.1300
FDP3652_Q DISTI # 512-FDP3652_Q	ON Semiconductor	MOSFET 100V 61a 0.016 Ohm RoHS: Not compliant	0
FDP3652	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	2464	1000:$1.1300 500:$1.1900 100:$1.2400 25:$1.2900 1:$1.3900
FDP3652	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	Europe - 624
FDP3652 DISTI # 1017692	ON Semiconductor	MOSFET, N, TO-220 RoHS: Compliant	0	500:$1.5800 100:$1.8100 10:$2.2600 1:$2.6500

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Availability

Stock:: 752
On Order:: 2735
Enter Quantity:

Current price of FDP3652 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.72~~; ~~$1.72~~

10: ~~$1.46~~; ~~$14.60~~

100: ~~$1.17~~; ~~$117.00~~

500: ~~$1.02~~; ~~$510.00~~

1000: ~~$0.85~~; ~~$849.00~~

2500: ~~$0.84~~; ~~$2 092.50~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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FDP3652

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes