BLF177

Mfr. #:: BLF177
Manufacturer:: Advanced Semiconductor, Inc.
Description:: RF MOSFET Transistors RF Transistor
Lifecycle:: New from this manufacturer.
Datasheet:: BLF177 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Advanced Semiconductor, Inc.

Product Category:: RF MOSFET Transistors

RoHS:: Y

Technology:: Si

Packaging:: Tray

Brand:: Advanced Semiconductor, Inc.

Product Type:: RF MOSFET Transistors

Factory Pack Quantity:: 1

Subcategory:: MOSFETs

Tags: BLF177, BLF17, BLF1, BLF

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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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BLF177 Description

***ical: Trans RF MOSFET N-CH 125V 16A 4-Pin CRFM

***ark: MOSFET, VHF, SOT-121; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:125V; Current, Id Cont:16A; Resistance, Rds On:0.2ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4.5V; Case Style:SOT-121; ;RoHS Compliant: Yes

***nell: MOSFET, VHF, SOT-121; Drain Source Voltage Vds: 125V; Continuous Drain Current Id: 16A; Power Dissipation Pd: 220W; Operating Frequency Min: 1MHz; Operating Frequency Max: 108MHz; RF Transistor Case: -; No. of Pins: 4Pins; Oper

***ment14 APAC: MOSFET, VHF, SOT-121; Transistor Type:RF MOSFET; Drain Source Voltage Vds:125V; Continuous Drain Current Id:16A; Power Dissipation Pd:220W; RF Transistor Case:SOT-121B; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Application Code:RFPOWMOS; Base Number:1; Current Idss Max:2.5mA; Gain Bandwidth ft Typ:28MHz; No. of Transistors:1; On Resistance Rds(on):200mohm; On State Resistance Max:300mohm; Package / Case:SOT-121; Pin Format:D(1), S(2&4), G(3); Power Dissipation Max:220W; Power Dissipation Pd:220W; Threshold Voltage Vgs Typ:4.5V; Transistor Case Style:SOT-121; Transistor Polarity:N Channel; Voltage Vds Typ:125V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.5V; Voltage Vgs th Min:2V

***ure Electronics: N-Channel 125 V 389 W HF/VHF/UHF MOS Field-Effect RF Power Transistor-M174

***roFlash: Rf Fet Transistor, 125 V, 20 A, 389 W, 230 Mhz, M174 Rohs Compliant: Yes

***r Electronics: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

***el Electronic: TDK - CGA2B3X7S2A102K050BB - Keramikvielschichtkondensator, SMD, 1000 pF, 100 V, 0402 [Metrisch 1005], ± 10%, X7S, Baureihe CGA

***nell: MOSFET, RF, 150W, 125V, 20A, M174; Drain Source Voltage Vds: 125V; Continuous Drain Current Id: 20A; Power Dissipation Pd: 389W; Operating Frequency Min: -; Operating Frequency Max: 230MHz; RF Transistor Case: M174; No. of Pin

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.1Ohm;ID 17A;TO-220AB;PD 79W;VGS +/-16V

***eco: Transistor IRL530N N-Channel MOSFET 100V 12A TO-220

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***ure Electronics: Single N-Channel 100 V 0.15 Ohm 34 nC HEXFET® Power Mosfet - TO-220-3

***p One Stop: Trans MOSFET N-CH 100V 17A 3-Pin(3+Tab) TO-220AB Tube

***akorn: MOSFET Transistor, N-Channel, TO-220AB

***roFlash: Power Field-Effect Transistor, 17A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

***ment14 APAC: MOSFET, N, LOGIC, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:100V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:63W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:17A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:63W; Power Dissipation Pd:63W; Pulse Current Idm:60A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 17 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 100 / Gate-Source Voltage V = 16 / Fall Time ns = 26 / Rise Time ns = 53 / Turn-OFF Delay Time ns = 30 / Turn-ON Delay Time ns = 7.2 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220AB / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 79

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 90Milliohms;ID 17A;TO-220AB;PD 70W;gFS 12S

***itex: Transistor: N-MOSFET; unipolar; 100V; 17A; 0.09ohm; 70W; -55+175 deg.C; THT; TO220

***eco: Transistor MOSFET N Channel 100 Volt 17 Amp 3-Pin 3+ Tab TO-220AB

***ure Electronics: Single N-Channel 100 V 90 mOhm 37 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***p One Stop: Trans MOSFET N-CH Si 100V 17A 3-Pin(3+Tab) TO-220AB Tube

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:17A; On Resistance, Rds(on):90mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes

***roFlash: Power Field-Effect Transistor, 17A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.052Ohm;ID 20A;TO-220 Full-Pak;PD 54W

***ure Electronics: Single N-Channel 100 V 0.052 Ohm 94 nC HEXFET® Power Mosfet - TO-220-3FP

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package, FULLPAK220-3, RoHS

***ow.cn: Trans MOSFET N-CH 100V 20A 3-Pin(3+Tab) TO-220AB Full-Pak Tube

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220FP Polarity: N Power dissipation: 42 W

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 20A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ark: MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:20A; On-Resistance, Rds(on):52mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220 FULLPAK RoHS Compliant: No

***nell: MOSFET, N, 100V, 18A, TO-220FP; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:18A; Resistance, Rds On:0.052ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220FP; Termination Type:Through Hole; Current, Idm Pulse:110A; No. of Pins:3; Power Dissipation:42W; Power, Pd:42W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:2.8°C/W; Transistors, No. of:1; Voltage, Isolation:2.5kV; Voltage, Vds Max:100V

***(Formerly Allied Electronics): NTD6416ANT4G N-channel MOSFET Transistor; 17 A; 100 V; 3-Pin D-PAK

***ure Electronics: N-Channel 100 V 81 mOhm 71 W Surface Mount Power MOSFET -TO-252-3

***emi: Single N-Channel Power MOSFET 100V, 17A, 81mΩ

***ark: MOSFET,N CHANNEL,W DIODE,100V,17A,DPAK; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:17A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

***nell: MOSFET,N CH,W DIODE,100V,17A,DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.073ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 71W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C

***emi: N-Channel Shielded Gate PowerTrench® MOSFET 100V , 18A, 23mΩ

***ark: MOSFET, N CH, 100V, 0.0189OHM, 18A, MLP-8; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0189ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that incorporates Shielded Gate Technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.

Market price

Part #	Mfg.	Description	Stock	Price
BLF177CR,112 DISTI # BLF177CR,112-ND	Ampleon	RF FET NCHA 125V SOT121B RoHS: Compliant Min Qty: 40 Container: Tray	Limited Supply - Call
BLF177,112 DISTI # 568-2386-ND	Ampleon	RF FET NCHA 125V 19DB SOT121B RoHS: Compliant Min Qty: 40 Container: Tray	Limited Supply - Call
BLF177,112 DISTI # 70R2752	NXP Semiconductors	HF/VHF POWER MOSFET, N CHANNEL, 125V, 16A, SOT-121B,Drain Source Voltage Vds:125V,Continuous Drain Current Id:16A,Power Dissipation Pd:220W,Operating Frequency Min:-,Operating Frequency Max:-,RF Transistor Case:-,MSL:- RoHS Compliant: Yes	0
BLF177 DISTI # 974-BLF177	Advanced Semiconductor Inc	RF MOSFET Transistors RF Transistor RoHS: Compliant	198	1:$96.0000 10:$80.0000 25:$72.0000 50:$64.0000 100:$57.6000
BLF177CR112	NXP Semiconductors	Now Ampleon, BLF177CR, HF/VHF power MOS transistor, SOT121B (CRFM4) RoHS: Not Compliant	18	1000:$131.5800 500:$138.5000 100:$144.2000 25:$150.3800 1:$161.9400
BLF177 DISTI # 1349665	NXP Semiconductors	MOSFET, VHF, SOT-121 RoHS: Compliant	0	1:$124.5500 10:$118.1200 100:$106.8700

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BLF177

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes