IPA65R065C7XKSA1

Mfr. #:: IPA65R065C7XKSA1
Manufacturer:: Infineon Technologies
Description:: MOSFET HIGH POWER BEST IN CLASS
Lifecycle:: New from this manufacturer.
Datasheet:: IPA65R065C7XKSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: IPA65R065C7XKSA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220FP-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 650 V

Id - Continuous Drain Current:: 15 A

Rds On - Drain-Source Resistance:: 58 mOhms

Vgs th - Gate-Source Threshold Voltage:: 3 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 64 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 34 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: CoolMOS

Packaging:: Tube

Height:: 16.15 mm

Length:: 10.65 mm

Series:: CoolMOS C7

Transistor Type:: 1 N-Channel

Width:: 4.85 mm

Brand:: Infineon Technologies

Fall Time:: 7 ns

Product Type:: MOSFET

Rise Time:: 14 ns

Factory Pack Quantity:: 500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 72 ns

Typical Turn-On Delay Time:: 17 ns

Part # Aliases:: IPA65R065C7 SP001080114

Unit Weight:: 0.211644 oz

Tags: IPA65R0, IPA65R, IPA65, IPA6, IPA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPA65R065C7XKSA1 Description

***ical: Trans MOSFET N-CH 650V 15A 3-Pin(3+Tab) TO-220FP

***ineon SCT: Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO220-3, RoHS

***ineon: Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 7.3pF 50volts C0G +/-0.05pF

*** Stop Electro: Power Field-Effect Transistor, 16A I(D), 600V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial

***et Europe: Trans MOSFET N-CH 700V 18A 3-Pin TO-220 FP Tube

***ineon SCT: Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO220-3, RoHS

***ineon: Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power

***icroelectronics: N-channel 650 V, 0.160 Ohm typ., 18 A MDmesh M5 Power MOSFET in TO-220FP package

***r Electronics: Power Field-Effect Transistor, 18A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ical: Trans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-220FP Tube

***ark: MOSFET, N-CH, 650V, 18A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

***icroelectronics: N-channel 650 V, 0.150 Ohm typ., 17 A MDmesh M5 Power MOSFET in TO-220FP package

***ure Electronics: N-Channel 710 V 179 mOhm Flange Mount MDmesh V Power Mosfet - TO-220FP

***ical: Trans MOSFET N-CH Si 650V 17A 3-Pin(3+Tab) TO-220FP Tube

*** Electronics: STMICROELECTRONICS STF21N65M5 Power MOSFET, N Channel, 17 A, 650 V, 0.15 ohm, 10 V, 4 V

***ark: MOSFET, N CH, 650V, 17A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 17A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ure Electronics: E Series N Channel 650 V 380 mO 70 nC Flange Mount Power Mosfet - TO-220FP

***et: Trans MOSFET N-CH 650V 12A 3-Pin TO-220 Full-Pak

*** Electronics: MOSFET 650V 392Ohm@10V 12A N-Ch E-SRS

***et: Trans MOSFET N-CH 650V 15A 3-Pin(3+Tab) TO-220

***or: N-CHANNEL POWER MOSFET

***icroelectronics: N-channel 650 V, 0.049 Ohm typ., 49 A MDmesh M2 Power MOSFET in a TO-247 package

***r Electronics: Power Field-Effect Transistor, 49A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ure Electronics: N-Channel 650 V 62 mOhm Flange Mount MDmesh M2 Power Mosfet - TO-247

***el Electronic: PowerPC e300c3 Microprocessor IC MPC83xx 1 Core, 32-Bit 200MHz 369-PBGA (19x19)

***icroelectronics: Automotive-grade N-channel 650 V, 0.058 Ohm typ., 42 A MDmesh M5 Power MOSFET in a D2PAK package

***ure Electronics: STB43N65M5 Series 650 V 63 mOhm 42 A N-Channel MDmesh M5 Power MOSFET - D²PAK-3

***ical: Trans MOSFET N-CH 650V 42A Automotive 3-Pin(2+Tab) D2PAK T/R

***r Electronics: Power Field-Effect Transistor, 42A I(D), 650V, 0.063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N-CH, 650V, 42A, TO263; Transistor Polarity: N Channel; Continuous Drain Current Id: 42A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.058ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 250W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Automotive Qualification Standard: AEC-Q101; SVHC: No SVHC (17-Dec-2015)

***icroelectronics: N-channel 650 V, 0.056 Ohm typ., 42 A MDmesh M5 Power MOSFET in TO-247 package

***ure Electronics: STW57N65M5 Series 710 V 0.063 Ohm 42 A N-Channel MDmesh V Power Mosfet - TO-247

***ark: MOSFET, N-CH, 650V, 42A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:42A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

***et: Transistor MOSFET N-Channel 650V 33A 3-Pin TO-247 Tube

*** Stop Electro: Power Field-Effect Transistor, 33A I(D), 650V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

***ark: Mosfet, N-Ch, 650V, 33A, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.058Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes

***ineon SCT: Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO247-3, RoHS

***ineon: Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power

***ical: Trans MOSFET N-CH 650V 33A 4-Pin(4+Tab) TO-247 Tube

***nell: MOSFET, N-CH, 650V, 33A, 171W, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 33A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.058ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 171W; Transistor Case Style: TO-247; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS C7 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon SCT: Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO247-4, RoHS

***ineon: Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power

***et: Transistor MOSFET N-Channel 650V 33A 3-Pin TO-220 Tube

***ark: Mosfet, N-Ch, 650V, 33A, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.058Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes

*** Stop Electro: Power Field-Effect Transistor, 33A I(D), 650V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon SCT: Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO220-3, RoHS

***ineon: Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power

IPA65R065C7XKSA1 More Information

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

CoolMOS™ C7 Power MOSFETs: Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.

Market price

Part #	Mfg.	Description	Stock	Price
IPA65R065C7XKSA1 DISTI # V36:1790_06378594	Infineon Technologies AG	Trans MOSFET N-CH 650V 15A 3-Pin(3+Tab) TO-220FP Tube RoHS: Compliant	0
IPA65R065C7XKSA1 DISTI # IPA65R065C7XKSA1-ND	Infineon Technologies AG	MOSFET N-CH 650V TO220-3 RoHS: Compliant Min Qty: 500 Container: Tube	Temporarily Out of Stock	500:$5.2487
IPA65R065C7XKSA1 DISTI # IPA65R065C7XKSA1	Infineon Technologies AG	Trans MOSFET N-CH 700V 15A 3-Pin TO-220 Tube - Bulk (Alt: IPA65R065C7XKSA1) RoHS: Compliant Min Qty: 89 Container: Bulk	Americas - 0	89:$3.9900 178:$3.8900 267:$3.6900 445:$3.5900 890:$3.4900
IPA65R065C7XKSA1 DISTI # IPA65R065C7XKSA1	Infineon Technologies AG	Trans MOSFET N-CH 700V 15A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPA65R065C7XKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0	500:$4.3900 1000:$4.1900 2000:$4.0900 3000:$3.8900 5000:$3.8900
IPA65R065C7 DISTI # 726-IPA65R065C7	Infineon Technologies AG	MOSFET HIGH POWER BEST IN CLASS RoHS: Compliant	0	1:$7.3200 10:$6.6100 25:$6.3100 100:$5.4800 250:$5.2300 500:$4.7700
IPA65R065C7XKSA1 DISTI # 726-IPA65R065C7XKSA1	Infineon Technologies AG	MOSFET HIGH POWER BEST IN CLASS	0	1:$7.3200 10:$6.6100 25:$6.3100 100:$5.4800 250:$5.2300 500:$4.7700
IPA65R065C7XKSA1	Infineon Technologies AG	Power Field-Effect Transistor, 19A I(D), 650V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	27640	1000:$3.7000 500:$3.8900 100:$4.0500 25:$4.2300 1:$4.5500
IPA65R065C7XKSA1 DISTI # IPA65R065C7	Infineon Technologies AG	N-Ch 650V 15A 34W 0,065R TO220-Fullpak RoHS: Compliant	0	1:€12.6000 10:€6.6000 50:€4.6000 100:€4.2200

Image	Part #	Description
	Mfr.#: IPA65R065C7XKSA1 OMO.#: OMO-IPA65R065C7XKSA1	MOSFET HIGH POWER BEST IN CLASS
	Mfr.#: IPA65R065C7 OMO.#: OMO-IPA65R065C7	MOSFET HIGH POWER BEST IN CLASS
	Mfr.#: IPA65R065C7 OMO.#: OMO-IPA65R065C7-1190	MOSFET HIGH POWER BEST IN CLASS
	Mfr.#: IPA65R065C7XKSA1 OMO.#: OMO-IPA65R065C7XKSA1-INFINEON-TECHNOLOGIES	MOSFET HIGH POWER BEST IN CLASS

IPA65R065C7XKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes