BSS123ATA

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-23-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

100 V

Id - Continuous Drain Current:

170 mA

Rds On - Drain-Source Resistance:

10 Ohms

Vgs - Gate-Source Voltage:

20 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

360 mW

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

1 mm

Length:

2.9 mm

Product:

MOSFET Small Signal

Series:

BSS123

Transistor Type:

1 N-Channel

Type:

FET

Width:

1.3 mm

Brand:

Diodes Incorporated

Fall Time:

10 ns

Product Type:

MOSFET

Rise Time:

10 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

15 ns

Typical Turn-On Delay Time:

10 ns

Unit Weight:

0.000282 oz

Tags

BSS123, BSS12, BSS1, BSS