SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 4 – APRIL 1998
FEATURES
*BV
DSS
= 100V
* Low Threshold
PARTMARKING DETAIL – SAA
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
100 V
Drain-Gate Voltage V
DGR
100 V
Continuous Drain Current at T
amb
=25°C I
D
170 mA
Pulsed Drain Current I
DM
680 mA
Gate-Source Voltage V
GS
± 20
V
Power Dissipation at T
amb
=25°C P
tot
360 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DSS
100 V I
D
=0.25mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
0.5 2.0 V I
D
=1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
50 nA
V
GS
=± 20V, V
DS
=0V
Zero Gate Voltage
Drain Current
I
DSS
500 nA V
DS
=100V, V
GS
=0V
Static Drain-Source
On-State Resistance (1)
R
DS(on)
6
10
Ω
Ω
V
GS
=10V, I
D
=170mA
V
GS
=4.5V, I
D
=170mA
Forward
Transconductance(1)(2)
g
fs
80 mS V
DS
=25V, I
D
=100mA
Input Capacitance (2) C
iss
25 pF
V
DS
=25V, V
GS
=0V, f=1MHz
Common Source
Output Capacitance (2)
C
oss
9pF
Reverse Transfer
Capacitance (2)
C
rss
4pF
Turn-On Delay Time (2)(3) t
d(on)
10 ns
V
DD
≈30V, I
D
=280mA
Rise Time (2)(3) t
r
10 ns
Turn-Off Delay Time (2)(3) t
d(off)
15 ns
Fall Time (2)(3) t
f
25 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
BSS123A
G
S
