IRF60B217

Mfr. #:: IRF60B217
Manufacturer:: Infineon Technologies
Description:: MOSFET N-CH 60V 60A
Lifecycle:: New from this manufacturer.
Datasheet:: IRF60B217 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: IRF60B217 more Information

Product Attribute
Attribute Value

Manufacturer: International Rectifier

Product Category: Transistors - FETs, MOSFETs - Single

Tags: IRF60, IRF6, IRF

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

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IRF60B217 Description

***Components: In a Tube of 50, N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220AB Infineon IRF60B217

***et: Transistor MOSFET N-CH 60V 60A 3-Pin TO-220 Tube

***ure Electronics: Single N-Channel 60 V 9 mOhm 44 nC HEXFET® Power Mosfet - TO-220-3

***ical: Trans MOSFET N-CH Si 60V 60A 3-Pin(3+Tab) TO-220AB Full-Pak Tube

***i-Key: MOSFET N-CH 60V 60A

***ark: Mosfet, N-Ch, 60V, 60A, To-220Ab; Transistor Polarity:n Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0073Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V; Power Rohs Compliant: Yes

***ment14 APAC: MOSFET, N-CH, 60V, 60A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0073ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V; Power Dissipation Pd:83W; Transistor Case Style:TO-220AB; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:StrongIRFET, HEXFET Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, N-CH, 60V, 60A, TO-220AB; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:60A; Napięcie drenu / źródła Vds:60V; Rezystancja przewodzenia Rds(on):0.0073ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:3.7V; Straty mocy Pd:83W; Rodzaj obudowy tranzystora:TO-220AB; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:175°C; Asortyment produktów:StrongIRFET, HEXFET Series; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:-; Substancje SVHC:No SVHC (27-Jun-2018)

IRF60B217 More Information

StrongIRFET™ Power MOSFETs: Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability.

Market price

Part #	Mfg.	Description	Stock	Price
IRF60B217 DISTI # V99:2348_14701516	Infineon Technologies AG	Trans MOSFET N-CH Si 60V 60A Tube RoHS: Compliant	2785	1:$1.1982
IRF60B217 DISTI # IRF60B217-ND	Infineon Technologies AG	MOSFET N-CH 60V 60A RoHS: Compliant Min Qty: 1 Container: Tube	3826In Stock	1000:$0.8055 500:$0.9721 100:$1.2499 10:$1.5550 1:$1.7200
IRF60B217 DISTI # 29529430	Infineon Technologies AG	Trans MOSFET N-CH Si 60V 60A Tube RoHS: Compliant	2785	2000:$0.6848 1000:$0.7102 500:$0.7729 100:$0.8677 12:$1.0438
IRF60B217 DISTI # IRF60B217	Infineon Technologies AG	Trans MOSFET N 60V 60A 3-Pin TO-220 Tube - Rail/Tube (Alt: IRF60B217) RoHS: Compliant Min Qty: 3000 Container: Tube	Americas - 0	3000:$0.5819 5000:$0.5609 8000:$0.5399 15000:$0.5219 30000:$0.5129
IRF60B217 DISTI # 12AC9751	Infineon Technologies AG	MOSFET, N-CH, 60V, 60A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0073ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.7V,Power RoHS Compliant: Yes	5948	1:$1.5900 10:$1.3700 100:$1.1200 500:$0.9910 1000:$0.8430 2500:$0.7920 10000:$0.7430
IRF60B217 DISTI # 942-IRF60B217	Infineon Technologies AG	MOSFET 60V, 60A, 9.0 mOhm 44 nC Qg RoHS: Compliant	828	1:$1.4900 10:$1.2700 100:$1.0100 500:$0.8840 1000:$0.7330
IRF60B217 DISTI # 1236144	Infineon Technologies AG	STRONGIR FET 60V 60A 9.0 MOHMTO220AB, PK	3040	10:£1.2810 50:£1.0890 200:£0.9610 500:£0.8330
IRF60B217 DISTI # C1S322000609819	Infineon Technologies AG	MOSFETs	2785	1000:$0.6972 500:$0.7728 100:$0.8675 10:$1.0436
IRF60B217 DISTI # 2709977	Infineon Technologies AG	MOSFET, N-CH, 60V, 60A, TO-220AB RoHS: Compliant	5953	5:£1.0700 25:£0.9450 100:£0.7730 250:£0.7240 500:£0.6750
IRF60B217 DISTI # 2709977	Infineon Technologies AG	MOSFET, N-CH, 60V, 60A, TO-220AB RoHS: Compliant	5948	1:$2.7500 10:$2.4800 100:$2.0000 500:$1.5500 1000:$1.2900

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Availability

Stock:: Available
On Order:: 2000
Enter Quantity:

Current price of IRF60B217 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.77~~; ~~$0.77~~

10: ~~$0.73~~; ~~$7.29~~

100: ~~$0.69~~; ~~$69.04~~

500: ~~$0.65~~; ~~$326.00~~

1000: ~~$0.61~~; ~~$613.70~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IRF60B217

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes