IRF60

IRF60R217 vs IRF60B217 vs IRF60DM206

 
PartNumberIRF60R217IRF60B217IRF60DM206
DescriptionMOSFET 60V, 58A, 9.9 mOhm 40 nC QgMOSFET 60V, 60A, 9.0 mOhm 44 nC QgMOSFET 60V, 130A, DirectFET 2.9mOhm, 133nC Og
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTThrough HoleSMD/SMT
Package / CaseTO-252-3TO-220-3DirectFET-ME
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V60 V
Id Continuous Drain Current58 A60 A130 A
Rds On Drain Source Resistance8 mOhms7.3 mOhms2.2 mOhms
Vgs th Gate Source Threshold Voltage2.1 V2.1 V3 V
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge40 nC44 nC133 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 150 C
Pd Power Dissipation83 W83 W96 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancement-
TradenameStrongIRFETStrongIRFETStrongIRFET
PackagingReelTubeReel
Height2.3 mm15.65 mm0.7 mm
Length6.5 mm10 mm6.35 mm
Width6.22 mm4.4 mm5.05 mm
BrandInfineon / IRInfineon / IRInfineon / IR
Forward Transconductance Min120 S150 S148 S
Fall Time12 ns20 ns30 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time29 ns37 ns32 ns
Factory Pack Quantity200010004800
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time21 ns24 ns60 ns
Typical Turn On Delay Time7.6 ns8.3 ns17 ns
Part # AliasesSP001559662SP001571396SP001561876
Unit Weight0.081130 oz0.081130 oz-
Manufacturer Part # Description RFQ
Infineon / IR
Infineon / IR
IRF60R217 MOSFET 60V, 58A, 9.9 mOhm 40 nC Qg
IRF60B217 MOSFET 60V, 60A, 9.0 mOhm 44 nC Qg
IRF60DM206 MOSFET 60V, 130A, DirectFET 2.9mOhm, 133nC Og
Infineon Technologies
Infineon Technologies
IRF60R217 MOSFET N-CH 60V 58A
IRF60B217 MOSFET N-CH 60V 60A
IRF60DM206 MOSFET N-CH 60V 130A
IRF60DM206-CUT TAPE New and Original
IRF6053 New and Original
IRF60DM206TRPBF New and Original
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