A3T19H455W23SR6

Mfr. #:: A3T19H455W23SR6
Manufacturer:: NXP Semiconductors
Description:: RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1930-1990 MHz, 81 W Avg., 30 V
Lifecycle:: New from this manufacturer.
Datasheet:: A3T19H455W23SR6 Datasheet
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More Information:: A3T19H455W23SR6 more Information A3T19H455W23SR6 Product Details

Product Attribute
Attribute Value

Manufacturer:: NXP

Product Category:: RF MOSFET Transistors

RoHS:: Y

Transistor Polarity:: Dual N-Channel

Technology:: Si

Id - Continuous Drain Current:: 3.6 A

Vds - Drain-Source Breakdown Voltage:: - 500 mV, 65 V

Gain:: 16.4 dB

Output Power:: 81 W

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 150 C

Mounting Style:: SMD/SMT

Package / Case:: ACP-1230S-4L2S

Packaging:: Reel

Operating Frequency:: 1930 MHz to 1990 MHz

Type:: RF Power MOSFET

Brand:: NXP Semiconductors

Number of Channels:: 2 Channel

Product Type:: RF MOSFET Transistors

Factory Pack Quantity:: 150

Subcategory:: MOSFETs

Vgs - Gate-Source Voltage:: - 6 V, 10 V

Vgs th - Gate-Source Threshold Voltage:: 1.4 V

Part # Aliases:: 935363503128

Tags: A3T1, A3T

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

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Packaging Boxes

A3T19H455W23SR6 More Information

Airfast® Third-Generation Power Amplifiers: NXP Semiconductors Airfast® Third-Generation Power Amplifiers provide the best in class performance for the critical parameters that include efficiency, gain, RF power, and signal bandwidth. The Airfast third-generation technology reduces the footprint required to deliver specific RF output power. These amplifiers include 28V and 48V LDMOS transistors. The Airfast third-generation amplifiers are designed for the asymmetrical Doherty amplifier architectures. These amplifiers feature high efficiency, reduced solution size, thermal performance, and operate at wideband frequency. The Airfast third-generation amplifiers support all global cellular standards including LTE and NR for 5G. These amplifiers reduce both the size of cellular base stations and the installation costs.

Market price

Part #	Mfg.	Description	Stock	Price
A3T19H455W23SR6 DISTI # A3T19H455W23SR6-ND	NXP Semiconductors	AIRFAST RF POWER LDMOS TRANSISTO RoHS: Compliant Min Qty: 150 Container: Tape & Reel (TR)	Temporarily Out of Stock	150:$119.7000
A3T19H455W23SR6 DISTI # A3T19H455W23SR6	Avnet, Inc.	Airfast RF Power LDMOS Transistor, 1930-1990 MHz, 81 W Avg., 30 V - Tape and Reel (Alt: A3T19H455W23SR6) RoHS: Compliant Min Qty: 150 Container: Reel	Americas - 0
A3T19H455W23SR6 DISTI # 51AC1917	NXP Semiconductors	AIRFAST RF POWER LDMOS TRANSISTOR, 1930-1990 MHZ, 81 W AVG., 30 V REEL	0	100:$112.5000 50:$119.7000 25:$121.5000 10:$123.3000 5:$126.9000 1:$130.5000
A3T19H455W23SR6 DISTI # 771-A3T19H455W23SR6	NXP Semiconductors	RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1930-1990 MHz, 81 W Avg., 30 V RoHS: Compliant	0	150:$111.3500

A3T19H455W23SR6

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes