SQD30N05-20L_GE3

Mfr. #:: SQD30N05-20L_GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET N-Channel 55V AEC-Q101 Qualified
Lifecycle:: New from this manufacturer.
Datasheet:: SQD30N05-20L_GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: SQD30N05-20L_GE3 Datasheet SQD30N05-20L_GE3 Datasheet (P4-P6)SQD30N05-20L_GE3 Datasheet (P7-P9)SQD30N05-20L_GE3 Datasheet (P10-P11)
ECAD Model:
More Information:: SQD30N05-20L_GE3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-252-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 55 V

Id - Continuous Drain Current:: 30 A

Rds On - Drain-Source Resistance:: 16 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1.5 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 18 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 50 W

Configuration:: Single

Channel Mode:: Enhancement

Qualification:: AEC-Q101

Tradename:: TrenchFET

Packaging:: Reel

Series:: SQ

Transistor Type:: 1 N-Channel

Brand:: Vishay / Siliconix

Forward Transconductance - Min:: 34 S

Fall Time:: 5 ns

Product Type:: MOSFET

Rise Time:: 10 ns

Factory Pack Quantity:: 2000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 18 ns

Typical Turn-On Delay Time:: 7 ns

Unit Weight:: 0.011993 oz

Tags: SQD30N, SQD30, SQD3, SQD

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
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Step3:
Packaging Boxes

SQD30N05-20L_GE3 Description

***ark: Mosfet Transistor, N Channel, 30 A, 55 V, 0.016 Ohm, 10 V, 2 V

***ical: Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) DPAK

***et: N-CHANNEL 55-V (D-S) 175C MOSFET

***S: French Electronic Distributor since 1988

***ment14 APAC: MOSFET,N CH,W DIODE,55V,30A,TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252; No. of Pins:3; Operating Temperature Range:-55°C to +175°C; Voltage Vgs Max:5V

***ineon SCT: Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS

***ure Electronics: Single N-Channel 55 V 24.5 mOhm 27 nC Automotive HEXFET® Power Mosfet - DPAK

***icontronic: Power Field-Effect Transistor, 30A I(D), 55V, 0.0245ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ineon: Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified

***ment14 APAC: MOSFET,N CH,55V,30A,DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:48W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Pd:48W; Voltage Vgs Max:20V

***ure Electronics: Single N-Channel 60 V 0.022 Ohms Surface Mount Power Mosfet - TO-252

***p One Stop: Trans MOSFET N-CH 60V 25A Automotive 3-Pin(2+Tab) DPAK

***nell: MOSFET,N CH,W DIODE,60V,25A,TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 25A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.018ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 62W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Voltage Vgs Max: 20V

***eco: Transistor MOSFET P Channel 55 Volt 31 Amp 3-Pin 2+ Tab Dpak Tape and Reel

***ure Electronics: Single P-Channel 55 V 0.065 Ohm 63 nC HEXFET® Power Mosfet - TO-252AA

***sible Micro: Transistor, Power MOSFET, P-channel, -55V, -31A, D-PAK, SMD

***ineon SCT: -55V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***nell: MOSFET, P CH, 55V, 31A, D-PAK; Transistor Polarity: P Channel; Continuous Drain Current Id: -31A; Drain Source Voltage Vds: -55V; On Resistance Rds(on): 0.065ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 110W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C

*** Stop Electro: Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

***ure Electronics: N-Channel 60 V 21 mOhm Surface Mount PowerTrench Mosfet TO-252-3

*** Source Electronics: Trans MOSFET N-CH 60V 38A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 60V 8.5A D-PAK

***emi: N-Channel PowerTrench® MOSFET, 38A, 21mΩ

***r Electronics: Power Field-Effect Transistor, 38A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ark: MOSFET; Transistor Type:MOSFET; Continuous Drain Current, Id:8.5A; Drain Source Voltage, Vds:60V; On Resistance, Rds(on):0.017ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.4V; Power Dissipation, Pd:2.8W ;RoHS Compliant: Yes

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

***ure Electronics: SQD23N06 Series 60 V 23 A 31 mOhm Automotive N-Channel Mosfet - TO-252-3

***ical: Trans MOSFET N-CH 60V 23A Automotive 3-Pin(2+Tab) DPAK

***el Electronic: Automotive N-Channel 60 V (D-S) 175 °C MOSFET

***ark: MOSFET, N-CH, 60V, 23A, TO-252 ROHS COMPLIANT: YES

***SIT Distribution GmbH: Power Field-Effect Transistor, 23A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***et: N-CH 60-V (D-S) 175C MOSFET LOGIC LE

***S: French Electronic Distributor since 1988

SQD30N05-20L_GE3 More Information

SQ Automotive Power MOSFETs: Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.

Market price

Part #	Mfg.	Description	Stock	Price
SQD30N05-20L_GE3 DISTI # SQD30N05-20L_GE3TR-ND	Vishay Siliconix	MOSFET N-CH 55V 30A TO252 RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR)	2000In Stock	10000:$0.5806 6000:$0.6033 2000:$0.6350
SQD30N05-20L_GE3 DISTI # SQD30N05-20L_GE3CT-ND	Vishay Siliconix	MOSFET N-CH 55V 30A TO252 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2000In Stock	1000:$0.7008 500:$0.8877 100:$1.0746 10:$1.3780 1:$1.5400
SQD30N05-20L_GE3 DISTI # SQD30N05-20L_GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 55V 30A TO252 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2000In Stock	1000:$0.7008 500:$0.8877 100:$1.0746 10:$1.3780 1:$1.5400
SQD30N05-20L_GE3 DISTI # SQD30N05-20L_GE3	Vishay Intertechnologies	Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) DPAK (Alt: SQD30N05-20L_GE3) RoHS: Compliant Min Qty: 2000	Europe - 2000	20000:€0.4919 12000:€0.5139 8000:€0.5809 4000:€0.7169 2000:€0.9999
SQD30N05-20L_GE3 DISTI # SQD30N05-20L_GE3	Vishay Intertechnologies	Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) DPAK - Tape and Reel (Alt: SQD30N05-20L_GE3) RoHS: Compliant Min Qty: 2000 Container: Reel	Americas - 0
SQD30N05-20L -GE3 DISTI # 37T8236	Vishay Intertechnologies	MOSFET Transistor, N Channel, 30 A, 55 V, 0.016 ohm, 10 V, 2 V RoHS Compliant: Yes	59	1000:$0.8630 500:$0.9220 100:$1.0700 50:$1.1800 25:$1.2900 10:$1.3900 1:$1.6900
SQD30N05-20L_GE3 DISTI # 78-SQD30N05-20L_GE3	Vishay Intertechnologies	MOSFET N-Channel 55V AEC-Q101 Qualified RoHS: Compliant	4554	1:$1.6000 10:$1.4900 100:$1.0900 500:$0.9270 1000:$0.7300 2000:$0.6590 4000:$0.6080 10000:$0.5680
SQD30N05-20L-GE3 DISTI # 78-SQD30N05-20L-GE3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 78-SQD30N05-20L_GE3 RoHS: Compliant	0
SQD30N05-20L-GE3	Vishay Intertechnologies		1958
SQD30N05-20L_GE3 DISTI # XSKDRABV0027382	Vishay Intertechnologies	Telecom Circuit, 1-Func RoHS: Compliant	6000 in Stock0 on Order	6000:$0.6853 2000:$0.7343
SQD30N05-20L -GE3 DISTI # 1869909	Vishay Intertechnologies	MOSFET,N CH,W DIODE,55V,30A,TO-252 RoHS: Compliant	59	6000:$1.5800 2000:$1.6300 1000:$1.7200 500:$1.8200 250:$1.9300 100:$2.1000 10:$2.4200 1:$2.7800
SQD30N05-20L -GE3 DISTI # 1869909	Vishay Intertechnologies	MOSFET,N CH,W DIODE,55V,30A,TO-252	115	500:£0.7910 250:£0.8120 100:£0.8330 10:£1.1400 1:£1.5000

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Availability

Stock:: Available
On Order:: 1987
Enter Quantity:

Current price of SQD30N05-20L_GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.60~~; ~~$1.60~~

10: ~~$1.49~~; ~~$14.90~~

100: ~~$1.09~~; ~~$109.00~~

500: ~~$0.93~~; ~~$463.50~~

1000: ~~$0.73~~; ~~$730.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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SQD30N05-20L_GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes