TGF3015-SM

TGF3015-SM
Mfr. #:
TGF3015-SM
Manufacturer:
Qorvo
Description:
RF JFET Transistors .03-3GHz Gain 17dB P3dB 9.3W@2.4GHz GaN
Lifecycle:
New from this manufacturer.
Datasheet:
TGF3015-SM Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
TGF3015-SM more Information
Product Attribute
Attribute Value
Manufacturer
Product Category
Transistors - FETs, MOSFETs - Single
Packaging
Tray
Part-Aliases
120419
Mounting-Style
SMD/SMT
Package-Case
QFN-EP-16
Technology
GaN SiC
Configuration
Single
Transistor-Type
HEMT
Gain
17.1 dB
Output-Power
11 W
Pd-Power-Dissipation
15.3 W
Operating-Frequency
0.03 GHz to 3 GHz
Id-Continuous-Drain-Current
557 mA
Vds-Drain-Source-Breakdown-Voltage
32 V
Transistor-Polarity
N-Channel
Development-Kit
TGF3015-SM-EVB1
Vgs-Gate-Source-Breakdown-Voltage
- 2.7 V
Tags
TGF30, TGF3, TGF
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TGF3015-SM GaN HEMT
Qorvo TGF3015-SM is a 10W (P3dB), 50ohm-input matched discrete GaN on SiC HEMT which operates from 30MHz to 3.0GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in an industry-standard 3x3mm package that saves real estate of already space-constrained handheld radios.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Part # Mfg. Description Stock Price
TGF3015-SM
DISTI # 772-TGF3015-SM
QorvoRF JFET Transistors .03-3GHz Gain 17dB P3dB 9.3W@2.4GHz GaN
RoHS: Compliant
156
  • 1:$58.0000
  • 25:$51.0000
  • 100:$45.0000
TGF3015-SM-EVB
DISTI # 772-TGF3015-SM-EVB
QorvoRF Development Tools
RoHS: Compliant
0
  • 1:$875.0000
Image Part # Description
TGF3015-SM

Mfr.#: TGF3015-SM

OMO.#: OMO-TGF3015-SM

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Mfr.#: TGF3020-SM

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Mfr.#: TGF3021-SM

OMO.#: OMO-TGF3021-SM-319

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Mfr.#: TGF3020-SM EVAL BOARD

OMO.#: OMO-TGF3020-SM-EVAL-BOARD-1152

RF Development Tools 4-6GHz 5Watt GaN Eval Board
TGF3020SM

Mfr.#: TGF3020SM

OMO.#: OMO-TGF3020SM-1190

New and Original
TGF30-07870787-020

Mfr.#: TGF30-07870787-020

OMO.#: OMO-TGF30-07870787-020-LEADER-TECH

Thermal Gap Filler/Sky Blue 3.0W/m-K
TGF30-07870787-039

Mfr.#: TGF30-07870787-039

OMO.#: OMO-TGF30-07870787-039-LEADER-TECH

Thermal Gap Filler/Sky Blue 3.0W/m-K
TGF30SF-07870787-020

Mfr.#: TGF30SF-07870787-020

OMO.#: OMO-TGF30SF-07870787-020-LEADER-TECH

THERMAL GAP FILLER, 200X200X0.5MM
Availability
Stock:
Available
On Order:
1500
Enter Quantity:
Current price of TGF3015-SM is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$67.50
$67.50
10
$64.12
$641.25
100
$60.75
$6 075.00
500
$57.38
$28 687.50
1000
$54.00
$54 000.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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