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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Part # | Mfg. | Description | Stock | Price |
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BUZ73A H DISTI # BUZ73AH-ND | Infineon Technologies AG | MOSFET N-CH 200V 5.5A TO220-3 RoHS: Compliant Min Qty: 2000 Container: Tube | Limited Supply - Call | |
BUZ73A H3046 DISTI # BUZ73AH3046-ND | Infineon Technologies AG | MOSFET N-CH 200V 5.5A TO220-3 RoHS: Compliant Min Qty: 500 Container: Tube | Limited Supply - Call | |
BUZ 73A H DISTI # BUZ73AH | Infineon Technologies AG | Trans MOSFET N-CH 200V 5.5A 3-Pin(3+Tab) TO-220 - Bulk (Alt: BUZ73AH) RoHS: Compliant Min Qty: 834 Container: Bulk | Americas - 0 | |
BUZ73AHXKSA1 DISTI # BUZ73AHXKSA1 | Infineon Technologies AG | - Bulk (Alt: BUZ73AHXKSA1) RoHS: Compliant Min Qty: 863 Container: Bulk | Americas - 0 |
|
BUZ73A H DISTI # 726-BUZ73AH | Infineon Technologies AG | MOSFET N-Ch 200V 5.5A TO220-3 RoHS: Compliant | 0 | |
BUZ73A H3046 DISTI # 726-BUZ73AH3046 | Infineon Technologies AG | MOSFET N-Ch 200V 5.5A TO220-3 RoHS: Compliant | 0 | |
BUZ73AH3046 | Infineon Technologies AG | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant | 12135 |
|
BUZ73AHXKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 16100 |
|
Image | Part # | Description |
---|---|---|
Mfr.#: BUZ73A H OMO.#: OMO-BUZ73A-H |
MOSFET N-Ch 200V 5.5A TO220-3 | |
Mfr.#: BUZ73L OMO.#: OMO-BUZ73L |
MOSFET N-Ch 200V 7A TO220-3 | |
Mfr.#: BUZ71A OMO.#: OMO-BUZ71A-1190 |
TO220 NCH MOS 50V .12R | |
Mfr.#: BUZ73A H |
MOSFET N-CH 200V 5.5A TO220-3 | |
Mfr.#: BUZ73AE3046XK |
MOSFET N-CH 200V 5.5A TO-220 | |
Mfr.#: BUZ73L H OMO.#: OMO-BUZ73L-H-1190 |
MOSFET N-Ch 200V | |
Mfr.#: BUZ76A OMO.#: OMO-BUZ76A-1190 |
Power Field-Effect Transistor, 2.6A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | |
Mfr.#: BUZ77 OMO.#: OMO-BUZ77-1190 |
New and Original | |
Mfr.#: BUZ78A OMO.#: OMO-BUZ78A-1190 |
New and Original | |
Mfr.#: BUZ73 H3046 OMO.#: OMO-BUZ73-H3046-126 |
IGBT Transistors MOSFET N-Ch 200V 7A I2PAK-3 |