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TC58NYG2S0HBAI6

TC58NYG2S0HBAI6
Mfr. #:
TC58NYG2S0HBAI6
Manufacturer:
Toshiba Memory
Description:
EEPROM 1.8V, 4 Gbit CMOS NAND EEPROM
Lifecycle:
New from this manufacturer.
Datasheet:
TC58NYG2S0HBAI6 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
TC58NYG2S0HBAI6 more Information
Product Attribute
Attribute Value
Manufacturer
Toshiba Semiconductor and Storage
Product Category
Memory
Series
-
Packaging
Tray
Package-Case
67-VFBGA
Operating-Temperature
-40°C ~ 85°C (TA)
Interface
Parallel
Voltage-Supply
1.7 V ~ 1.95 V
Supplier-Device-Package
67-VFBGA (6.5x8)
Memory-Size
4G (512M x 8)
Memory-Type
EEPROM - NAND
Speed
25ns
Format-Memory
EEPROMs - Serial
Tags
TC58NYG2S0H, TC58NYG2S0, TC58NYG2, TC58NYG, TC58NY, TC58N, TC58, TC5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    E**f
    E**f
    RU

    Delivery 65 days. Put it in the mailbox.

    2019-05-07
    S***s
    S***s
    NO

    A+

    2019-07-27
***ical
NAND Flash Parallel 1.8V 4G-bit 512M x 8 67-Pin VFBGA
***i-Key
IC EEPROM 4GBIT 25NS 67FBGA
***et
4Gbit, generation: 24nm, VCC=1.7 to 1.95V
SLC NAND and BENAND
Toshiba SLC NAND and BENAND provide best-in-class endurance and data retention for sensitive or frequently used system data. Toshiba SLC are the optimal solution for long lasting products or systems working with extremely high data throughput between the host and the memory. 
Part # Mfg. Description Stock Price
TC58NYG2S0HBAI6
DISTI # V99:2348_18852635		Toshiba America Electronic ComponentsNAND Flash Serial 1.8V 4G-bit 512M x 8 67-Pin VFBGA26
  • 2500:$3.2660
  • 1000:$3.2780
  • 500:$3.4360
  • 250:$3.5660
  • 100:$3.5750
  • 50:$3.9590
  • 25:$3.9770
  • 10:$4.0590
  • 1:$4.4450
TC58NYG2S0HBAI6
DISTI # TC58NYG2S0HBAI6		Toshiba America Electronic Components4Gbit, generation: 24nm, VCC=1.7 to 1.95V - Trays (Alt: TC58NYG2S0HBAI6)
RoHS: Compliant
Min Qty: 338
Container: Tray		Americas - 0
  • 3380:$2.4900
  • 2028:$2.5900
  • 676:$2.6900
  • 1352:$2.6900
  • 338:$2.7900
TC58NYG2S0HBAI6_TRAY
DISTI # TC58NYG2S0HBAI6_TRAY		Toshiba America Electronic ComponentsNAND Flash Memory (Alt: TC58NYG2S0HBAI6_TRAY)
RoHS: Compliant
Min Qty: 1		Europe - 0
    TC58NYG2S0HBAI6
    DISTI # 757-TC58NYG2S0HBAI6    		Toshiba America Electronic ComponentsNAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)
    RoHS: Compliant    		336
    • 1:$4.5900
    • 10:$4.1600
    • 25:$4.0700
    • 50:$4.0500
    • 100:$3.6300
    • 250:$3.6200
    • 500:$3.4800
    • 1000:$3.3100
    • 2500:$3.1600
    Image Part # Description
    TC58NYG2S0HBAI4

    Mfr.#: TC58NYG2S0HBAI4

    OMO.#: OMO-TC58NYG2S0HBAI4

    		 NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)
    TC58NYG0S3EBAI4

    Mfr.#: TC58NYG0S3EBAI4

    OMO.#: OMO-TC58NYG0S3EBAI4

    		 NAND Flash 1.8V 1Gb 43nm SLC NAND (EEPROM)
    TC58NYG0S3EBAI4

    Mfr.#: TC58NYG0S3EBAI4

    OMO.#: OMO-TC58NYG0S3EBAI4-1151

    		 SLC NAND Flash Serial 1.8V 1Gbit 128M x 8bit 63-Pin TFBGA - Trays (Alt: TC58NYG0S3EBAI4)
    TC58NYG1S3HBAI4_TRAY

    Mfr.#: TC58NYG1S3HBAI4_TRAY

    OMO.#: OMO-TC58NYG1S3HBAI4-TRAY-1190

    		 New and Original
    TC58NYG1S8EBAI4

    Mfr.#: TC58NYG1S8EBAI4

    OMO.#: OMO-TC58NYG1S8EBAI4-1190

    		 New and Original
    TC58NYG2S0FBAI4

    Mfr.#: TC58NYG2S0FBAI4

    OMO.#: OMO-TC58NYG2S0FBAI4-1190

    		 New and Original
    TC58NYG2S3ETAI0B3H

    Mfr.#: TC58NYG2S3ETAI0B3H

    OMO.#: OMO-TC58NYG2S3ETAI0B3H-1190

    		 New and Original
    TC58NYG2S3ETAIO

    Mfr.#: TC58NYG2S3ETAIO

    OMO.#: OMO-TC58NYG2S3ETAIO-1190

    		 New and Original
    TC58NYG1S3HBAI6

    Mfr.#: TC58NYG1S3HBAI6

    OMO.#: OMO-TC58NYG1S3HBAI6-TOSHIBA-MEMORY-AMERICA

    		 EEPROM 1.8V, 2 Gbit CMOS NAND EEPROM
    TC58NYG1S3HBAI6-ND

    Mfr.#: TC58NYG1S3HBAI6-ND

    OMO.#: OMO-TC58NYG1S3HBAI6-ND-1190

    		 New and Original
    Availability
    Stock:
    Available
    On Order:
    1000
    Enter Quantity:
    Current price of TC58NYG2S0HBAI6 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $4.92
    $4.92
    10
    $4.68
    $46.75
    100
    $4.43
    $442.94
    500
    $4.18
    $2 091.65
    1000
    $3.94
    $3 937.20
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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