PartNumber | TC58NYG2S0HBAI4 | TC58NYG2S0FBAI4 | TC58NYG2S0HBAI4-ND |
Description | NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM) | ||
Manufacturer | Toshiba | TOSHIBA | - |
Product Category | NAND Flash | Memory | - |
RoHS | Y | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TFBGA-63 | - | - |
Memory Size | 4 Gbit | - | - |
Interface Type | Parallel | - | - |
Organization | 512 M x 8 | - | - |
Timing Type | Synchronous | - | - |
Data Bus Width | 8 bit | - | - |
Supply Voltage Min | 1.7 V | - | - |
Supply Voltage Max | 1.95 V | - | - |
Supply Current Max | 30 mA | - | - |
Minimum Operating Temperature | - 40 C | - | - |
Maximum Operating Temperature | + 85 C | - | - |
Packaging | Tray | - | - |
Memory Type | NAND | - | - |
Product | NAND Flash | - | - |
Speed | 25 ns | - | - |
Architecture | Block Erase | - | - |
Brand | Toshiba Memory | - | - |
Maximum Clock Frequency | - | - | - |
Moisture Sensitive | Yes | - | - |
Product Type | NAND Flash | - | - |
Factory Pack Quantity | 210 | - | - |
Subcategory | Memory & Data Storage | - | - |