TC58NYG2S0HBAI6

TC58NYG2S0HBAI6
Mfr. #:
TC58NYG2S0HBAI6
Manufacturer:
Toshiba Memory
Description:
NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)
Lifecycle:
New from this manufacturer.
Datasheet:
TC58NYG2S0HBAI6 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
TC58NYG2S0HBAI6 more Information
Product Attribute
Attribute Value
Manufacturer:
Toshiba
Product Category:
NAND Flash
RoHS:
Y
Mounting Style:
SMD/SMT
Package / Case:
VFBGA-67
Memory Size:
4 Gbit
Interface Type:
Parallel
Organization:
512 M x 8
Data Bus Width:
8 bit
Supply Voltage - Min:
1.7 V
Supply Voltage - Max:
1.95 V
Supply Current - Max:
30 mA
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 85 C
Packaging:
Tray
Memory Type:
NAND
Brand:
Toshiba Memory
Maximum Clock Frequency:
-
Moisture Sensitive:
Yes
Product Type:
NAND Flash
Factory Pack Quantity:
338
Subcategory:
Memory & Data Storage
Tags
TC58NYG2S0H, TC58NYG2S0, TC58NYG2, TC58NYG, TC58NY, TC58N, TC58, TC5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
NAND Flash Parallel 1.8V 4G-bit 512M x 8 67-Pin VFBGA
***i-Key
IC EEPROM 4GBIT 25NS 67FBGA
***et
4Gbit, generation: 24nm, VCC=1.7 to 1.95V
SLC NAND and BENAND
Toshiba SLC NAND and BENAND provide best-in-class endurance and data retention for sensitive or frequently used system data. Toshiba SLC are the optimal solution for long lasting products or systems working with extremely high data throughput between the host and the memory. 
Part # Mfg. Description Stock Price
TC58NYG2S0HBAI6
DISTI # V99:2348_18852635
Toshiba America Electronic ComponentsNAND Flash Serial 1.8V 4G-bit 512M x 8 67-Pin VFBGA26
  • 2500:$3.2660
  • 1000:$3.2780
  • 500:$3.4360
  • 250:$3.5660
  • 100:$3.5750
  • 50:$3.9590
  • 25:$3.9770
  • 10:$4.0590
  • 1:$4.4450
TC58NYG2S0HBAI6
DISTI # TC58NYG2S0HBAI6
Toshiba America Electronic Components4Gbit, generation: 24nm, VCC=1.7 to 1.95V - Trays (Alt: TC58NYG2S0HBAI6)
RoHS: Compliant
Min Qty: 338
Container: Tray
Americas - 0
  • 3380:$2.4900
  • 2028:$2.5900
  • 676:$2.6900
  • 1352:$2.6900
  • 338:$2.7900
TC58NYG2S0HBAI6_TRAY
DISTI # TC58NYG2S0HBAI6_TRAY
Toshiba America Electronic ComponentsNAND Flash Memory (Alt: TC58NYG2S0HBAI6_TRAY)
RoHS: Compliant
Min Qty: 1
Europe - 0
    TC58NYG2S0HBAI6
    DISTI # 757-TC58NYG2S0HBAI6
    Toshiba America Electronic ComponentsNAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)
    RoHS: Compliant
    336
    • 1:$4.5900
    • 10:$4.1600
    • 25:$4.0700
    • 50:$4.0500
    • 100:$3.6300
    • 250:$3.6200
    • 500:$3.4800
    • 1000:$3.3100
    • 2500:$3.1600
    Image Part # Description
    74736-0222

    Mfr.#: 74736-0222

    OMO.#: OMO-74736-0222-409

    I/O Connectors XFP CAGE ASSY W/HEAT SINK
    Availability
    Stock:
    336
    On Order:
    2319
    Enter Quantity:
    Current price of TC58NYG2S0HBAI6 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $4.90
    $4.90
    10
    $4.47
    $44.70
    50
    $4.35
    $217.50
    100
    $3.91
    $391.00
    250
    $3.89
    $972.50
    500
    $3.65
    $1 825.00
    1000
    $3.49
    $3 490.00
    2500
    $3.38
    $8 450.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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