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NGTB35N65FL2WG

NGTB35N65FL2WG
Mfr. #:
NGTB35N65FL2WG
Manufacturer:
ON Semiconductor
Description:
IGBT Transistors 650V/35A FAST IGBT FSII T
Lifecycle:
New from this manufacturer.
Datasheet:
NGTB35N65FL2WG Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NGTB35N65FL2WG DatasheetNGTB35N65FL2WG Datasheet (P4-P6)NGTB35N65FL2WG Datasheet (P7-P8)
ECAD Model:
More Information:
NGTB35N65FL2WG more Information
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-247-3
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
650 V
Collector-Emitter Saturation Voltage:
2.2 V
Maximum Gate Emitter Voltage:
20 V
Continuous Collector Current at 25 C:
70 A
Pd - Power Dissipation:
300 W
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Packaging:
Tube
Continuous Collector Current Ic Max:
70 A
Brand:
ON Semiconductor
Gate-Emitter Leakage Current:
200 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
30
Subcategory:
IGBTs
Unit Weight:
1.340411 oz
Tags
NGTB35, NGTB3, NGTB, NGT
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 70A 300000mW 3-Pin(3+Tab) TO-247 Tube
***ied Electronics & Automation
NGTB35N65FL2WG; IGBT Transistor; 70 A 650 V; 1MHz; 3-Pin TO-247
***ure Electronics
NGTB35N65: 650 V 70 A 300 W Through Hole Field Stop II IGBT - TO-247-3
***nell
650V/35A FAST IGBT FSII T; DC Collector Current: 70A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 300W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
Field Stop II Series IGBTs
ON Semiconductor's Field Stop II Series IGBTs feature a robust and cost effective Field Stop II Trench construction, and provides superior performance, offering both low on state voltage and minimal switching loss. Features include extremely efficient trench, short circuit capable, available in rates of 15A to 75A, reduction in switching losses, and reduction in input capacitance. These IGBTs are well suited for UPS, solar, half bridge resonant, or demanding switching applications. Incorporated into each device is a soft and fast co−packaged free wheeling diode with a low forward voltage.Learn More
Part # Mfg. Description Stock Price
NGTB35N65FL2WG
DISTI # NGTB35N65FL2WGOS-ND		ON SemiconductorIGBT 650V 70A 300W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		107In Stock
  • 1020:$1.6464
  • 510:$1.9522
  • 120:$2.2932
  • 30:$2.6460
  • 1:$3.1200
NGTB35N65FL2WG
DISTI # NGTB35N65FL2WG		ON SemiconductorTrans IGBT Chip N-CH 650V 70A 3-Pin TO-247 Tube - Bulk (Alt: NGTB35N65FL2WG)
Min Qty: 202
Container: Bulk		Americas - 0
  • 202:$1.5900
  • 204:$1.5900
  • 406:$1.4900
  • 1010:$1.4900
  • 2020:$1.4900
NGTB35N65FL2WG
DISTI # NGTB35N65FL2WG		ON SemiconductorTrans IGBT Chip N-CH 650V 70A 3-Pin TO-247 Tube - Rail/Tube (Alt: NGTB35N65FL2WG)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 0
  • 1:$1.3900
  • 10:$1.3900
  • 25:$1.3900
  • 50:$1.3900
  • 100:$1.3900
  • 500:$1.3900
  • 1000:$1.2900
NGTB35N65FL2WG.
DISTI # 61AC1092		ON SemiconductorDC Collector Current:70A,Collector Emitter Saturation Voltage Vce(on):1.7V,Power Dissipation Pd:300W,Collector Emitter Voltage V(br)ceo:650V,No. of Pins:3Pins,Operating Temperature Max:175°C,Product Range:-,MSL:- RoHS Compliant: Yes21
  • 1000:$1.2900
  • 1:$1.3900
NGTB35N65FL2WG
DISTI # 70547360		ON SemiconductorNGTB35N65FL2WG,IGBT Transistor,70 A 650 V,1MHz,3-Pin TO-247
RoHS: Compliant		0
  • 2:$2.9600
  • 20:$2.8200
  • 50:$2.6800
  • 100:$2.5500
  • 200:$2.4200
NGTB35N65FL2WG
DISTI # 863-NGTB35N65FL2WG		ON SemiconductorIGBT Transistors 650V/35A FAST IGBT FSII T
RoHS: Compliant		901
  • 1:$2.9700
  • 10:$2.5200
  • 100:$2.1900
  • 250:$2.0800
  • 500:$1.8600
  • 1000:$1.5700
  • 2500:$1.4900
  • 5000:$1.4400
NGTB35N65FL2WGON SemiconductorInsulated Gate Bipolar Transistor, 70A I(C), 650V V(BR)CES, N-Channel
RoHS: Compliant		210
  • 1000:$1.6300
  • 500:$1.7200
  • 100:$1.7900
  • 25:$1.8700
  • 1:$2.0100
NGTB35N65FL2WG
DISTI # 8427898P		ON SemiconductorIGBT FIELD STOP II 650V 35A DIODE TO247, TU284
  • 40:£1.7950
  • 20:£1.8900
NGTB35N65FL2WGON Semiconductor 2361
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    Availability
    Stock:
    862
    On Order:
    2845
    Enter Quantity:
    Current price of NGTB35N65FL2WG is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $3.46
    $3.46
    10
    $2.94
    $29.40
    100
    $2.56
    $256.00
    250
    $2.43
    $607.50
    500
    $2.17
    $1 085.00
    1000
    $1.83
    $1 830.00
    2500
    $1.74
    $4 350.00
    5000
    $1.69
    $8 450.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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