NGTB35N65FL2WG
www.onsemi.com
5
TYPICAL CHARACTERISTICS
Figure 13. Switching Loss vs. R
g
R
g
, GATE RESISTOR (W)
453525155
4
SWITCHING LOSS (mJ)
55 65
V
CE
= 400 V
V
GE
= 15 V
T
J
= 150°C
I
C
= 35 A
75
E
off
V
CE
= 400 V
V
GE
= 15 V
T
J
= 150°C
I
C
= 35 A
Figure 14. Switching Time vs. R
g
R
g
, GATE RESISTOR (W)
453525155
10000
SWITCHING TIME (ns)
55 65 75 85
Figure 15. Switching Loss vs. V
CE
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
450400350300250
SWITCHING LOSS (mJ)
500 550 600
I
C
= 35 A
V
GE
= 15 V
T
J
= 150°C
Rg = 10 W
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
SWITCHING TIME (ns)
1000
Figure 16. Switching Time vs. V
CE
I
C
= 35 A
V
GE
= 15 V
T
J
= 150°C
Rg = 10 W
Figure 17. Safe Operating Area
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
1000100101
0.1
1
10
100
1000
50 ms
100 ms
1 ms
dc operation
Single Nonrepetitive
Pulse T
C
= 25°C
Curves must be derated
linearly with increase
in temperature
Figure 18. Reverse Bias Safe Operating Area
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
1000100101
1
10
100
1000
V
GE
= 15 V, T
C
= 125°C
1000
100
10
100
10
3.5
3
2.5
2
1.5
1
0.5
0
2
325275225175 475 525 575375 425
E
on
t
f
t
d(off)
t
d(on)
t
r
200150
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
E
off
E
on
t
f
t
d(off)
t
d(on)
t
r
